BiVO4膜电极的制备及其光电化学性能

doi:10.3866/PKU.WHXB20110913

Acta Phys. -Chim. Sin. ›› 2011, Vol. 27 ›› Issue (09): 2160-2166.doi: 10.3866/PKU.WHXB20110913

• ELECTROCHEMISTRY AND NEW ENERGY • Previous Articles Next Articles

Preparation and Photoelectrochemical Performance of BiVO₄ Film Electrode

PENG Tian-You, KE Ding-Ning, ZENG Peng, ZHANG Xiao-Hu, FAN Ke

College of Chemistry and Molecular Science, Wuhan University, Wuhan 430072, P. R. China

Received:2011-04-06 Revised:2011-06-05 Published:2011-08-26
Contact: PENG Tian-You E-mail:typeng@whu.edu.cn
Supported by:
The project was supported by the National Natural Science Foundation of China (20871096, 20973128), Program for New Century Excellent Talents in University, China (NCET-07-0637), and Fundamental Research Funds for the Central Universities of China (2081003).

Abstract

Abstract: A BiVO₄ film electrode was prepared using a home-made BiVO₄ nanopowder and the effects of annealing temperature and film thickness on its photoelectrochemical behavior, electron transport and recombination in the BiVO₄ electrode were systematically studied by electrochemical techniques. Experimental results indicate that the annealing temperature and film thickness can significantly influence the photoelectrochemical characteristics of the BiVO₄ electrode. At low annealing temperature (≤500 °C) the photoelectrochemical activity improved upon increasing the temperature and the optimal activity was obtained for the electrode annealed at 500 ° C. At high temperature (>500 ° C) the photoelectrochemical activity decreased because of a marked increase of bulk traps in the electrode. The BiVO₄ electrode showed good photon-to-electron conversion efficiency under visible light and its bandgap was found to be 2.36 eV based on an incident monochromatic photon-to-electric conversion efficiency curve. The flat-band potential (E_fb) of BiVO₄ was determined to be -0.7 V (vs Ag/AgCl) by the Mött Schottky method. These results give an important reference for the optimization of the BiVO₄ photocatalytic system.

Key words: BiVO₄ film electrode, Photoelectrochemical performance, Transient photocurrent spectrum, Flat-band potential

PENG Tian-You, KE Ding-Ning, ZENG Peng, ZHANG Xiao-Hu, FAN Ke. Preparation and Photoelectrochemical Performance of BiVO₄ Film Electrode[J].Acta Phys. -Chim. Sin., 2011, 27(09): 2160-2166.

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Preparation and Photoelectrochemical Performance of BiVO₄ Film Electrode

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