Acta Phys. -Chim. Sin. ›› 2008, Vol. 24 ›› Issue (04): 695-699.doi: 10.3866/PKU.WHXB20080426

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Dielectric and Luminescent Properties of Rare Earth-Doped Ba0.6Sr0.4TiO3 Thin Films

YU Dao; LIU Qian; LIU Qing-Feng   

  1. State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China; Graduate School of the Chinese Academy of Sciences, Beijing 100049, P. R. China
  • Received:2007-11-02 Revised:2007-12-19 Published:2008-04-07
  • Contact: LIU Qian E-mail:qianliu@sunm.shcnc.ac.cn

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Abstract: Ba0.6Sr0.4TiO3:Re (BST:Re) thin films were synthesized by ion beam sputtering deposition. MgO(100) and Si(100) substrates were used for different measure requirements. The as-deposited multilayer films were transformed into polycrystalline films after two-step anealling-diffusion at lower temperature and crystallization at higher temperature. The dielectric constants of BST:Re/MgO(Re=Er, Eu, Pr/Al) samples were determined by a scanning tip microwave near-field microscopy. The results indicated that the dopings of appropriate amount of rare earth ions improved the dielectric constants, where the optimal doping concentratrations of Er3+ and Eu3+ ions were around 4.5% and 5.7%(atom fraction), respectively. The samples co-doped with Pr3+ and Al3+ got an optimum performance under 4-8 of Al/Pr molar ratio. We also investigated the photoluminescence properties of BST:Re/Si (Re=Er, Eu) samples. The luminescent quenching concentrations of Er3+ and Eu3+ ions doped in BST thin films were 4.20% and 8.95% (atom fraction), respectively.

Key words: Bariumstrontiumtitanate, Rare earth-doped, Dielectric, Luminescence, Combinatorial materials chip