Acta Phys. -Chim. Sin. ›› 2009, Vol. 25 ›› Issue (04): 724-728.doi: 10.3866/PKU.WHXB20090428

• ARTICLE • Previous Articles     Next Articles

Synthesis of Highly-Crystallized Ternary Cd1-xZnxS Nanowires by Chemical Vapor Deposition

HOU Jun-Wei, SONG Bo, ZHANG Zhi-Hua, WANG Wen-Jun, WU Rong, SUN Yan-Fei, ZHENG Yu-Feng, DING Peng, JIAN Ji-Kang   

  1. School of Physics, Xinjiang University, Urumqi 830046, P. R. China; Institute of Physics, Chinese Academy of Sciences, Beijing 100890, P. R. China; 3Department of Physics, School of Science, Beihang University, Beijing 100191, P. R. China
  • Received:2008-11-02 Revised:2009-01-15 Published:2009-03-31
  • Contact: JIAN Ji-Kang E-mail:jikangjian@gmail.com

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Abstract:

Single crystal Cd1-xZnxS nanowires were directly synthesized by a simple chemical vapor deposition process using ZnS, CdS, and C powders as starting materials. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersive X-ray spectrum (EDXS), and Raman spectrum were used to characterize the morphology, microstructure, composition and phonon modes of the products. It was found that single crystal ternary Cd1 -xZnxS nanowires with a composition x of about 0.2 are highly crystallized in a wurtzite structure and grow along the [210] direction with diameters in the range of 80-100 nm and lengths of up to tens of micrometers. Raman spectrumof nanowires showed small blue shifts compared to that of CdS.

Key words: Cd1-xZnxS, Nanowires, Chemical vapour deposition