物理化学学报 >> 2003, Vol. 19 >> Issue (09): 864-866.doi: 10.3866/PKU.WHXB20030917

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自偏压作用下纳米碳管的定向生长

王升高;汪建华;王传新;马志彬;满卫东   

  1. 武汉化工学院 材料科学与工程系, 等离子体化学与新材料重点实验室 , 武汉 430073;
  • 收稿日期:2003-01-10 修回日期:2003-03-07 发布日期:2003-09-15
  • 通讯作者: 汪建华 E-mail:wyysg0984@sina.com

Self-bias Induced Aligned Growth of Carbon Nanotubes

Wang Sheng-Gao;Wang Jian-Hua;Wang Chuan-Xin;Ma Zhi-Bin;Man Wei-Dong   

  1. Province Key Laboratory of Plasma Chemistry and Advanced Materials, Department of Material Science and Engineering , Wuhan Institute of Chemical Technology, Wuhan 430073; Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031
  • Received:2003-01-10 Revised:2003-03-07 Published:2003-09-15
  • Contact: Wang Jian-Hua; E-mail:wyysg0984@sina.com

摘要: 以玻璃为基板材料, 在550 ℃的低温条件下利用微波等离子体化学气相沉积法合成了定向纳米碳管.结果表明, 在利用微波等离子体化学气相沉积法合成纳米碳管时, 因等离子体作用存在于基板表面的自偏压对纳米碳管的定向生长起着非常重要的作用.自偏压的作用总是使纳米碳管的生长垂直于基板表面.

关键词: 纳米碳管, 定向生长, 自偏压, 微波等离子体化学气相沉积法

Abstract: In this paper, under the catalytic effect of nickel particles supported on glass, self-aligned carbon nanotubes were synthesized by microwave plasma chemical vapor deposition under a mixture of methane and hydrogen gases at about 550 ℃.During the process of nanotubes growth, the total pressure in the chamber was kept at 3 kPa, the microwave plasma input power was 300 W, and the flow rates of H2 and CH4 were 50 and 1 standard cubic centimeter (sccm) per minute, respectively. It was found that the carbon nanotubes grew always perpendicular to the substrate surface under the effect of plasma. When the substrate was not contacted with plasma, only entangled carbon nanotubes grew on glass randomly. From the research results, we can demonstrate that the electrical self-bias imposed on the substrate is the primary mechanism responsible for the alignment of carbon nanotubes, and we can envision that this simple method can be of great importance for the fabrication of devices in the future.

Key words: Carbon nanotubes, Aligned growth, Self-bias, Microwave plasma chemical vapor deposition