物理化学学报 >> 2004, Vol. 20 >> Issue (10): 1253-1257.doi: 10.3866/PKU.WHXB20041018

研究论文 上一篇    下一篇

半花菁染料LB膜的铁电性与厚度关系

李淑红;马世红;李波;孙兰;王根水;孟祥建;褚君浩;王文澄   

  1. 复旦大学光科学与工程系, 先进光子学材料与器件国家重点实验室; 1复旦大学物理学系, 先进光子学材料与器件国家重点实验室,上海　200433; 红外物理国家重点实验室,中国科学院上海技术物理研究所,上海　200083
  • 收稿日期:2004-03-15 修回日期:2004-05-24 发布日期:2004-10-15
  • 通讯作者: 马世红 E-mail:shma@fudan.edu.cn

Thickness Dependence of Ferroelectricity in Hemic yanine Langmuir-Blodgett Multilayer Films

Li Shu-Hong;Ma Shi-Hong;Li Bo;Sun Jing-Lan;Wang Gen-Shui;Meng Xiang-Jian;Chu Jun-Hao;Wang Wen-Cheng   

  1. Department of Optical Science and Engineering, State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai　200433; 1Department of Physics, State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai　200433, National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai　200083
  • Received:2004-03-15 Revised:2004-05-24 Published:2004-10-15
  • Contact: Ma Shi-Hong E-mail:shma@fudan.edu.cn

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摘要： 报道了半花菁染料LB膜铁电性与膜厚度的依赖性.根据所测得的电滞回线发现,矫顽电场(Ec)随薄膜厚度(以薄膜的层数N表示)的增加而减少,在薄膜厚度为30～200 nm的范围内,它们之间的关系可用幂指数公式表示为Ec∝N－4/3,这种关系与其它传统的无机铁电材料完全相同.通过样品介电和铁电性能的测量,以存贮元件的物理参量－优值(Ps/εrEc)作为参比标准,可得铁电半花菁染料LB膜的最佳厚度为60 nm,且其优值的数值与偏氟乙烯-三氟乙烯共聚物P(VdF-TrFE) (n :n=70:30)的优值数值处在同一数量级上.

关键词: LB膜, 铁电性, 电滞回线, 矫顽电场, 存贮元件的优值

Abstract: Typical ferroelectricity in Langmuir-Blodgett multilayers prepared from hemicyanine dyes has been demonstrated by observed ferroelectric hysteresis loop. Their ferroelectric properties are found to be thickness dependent. The coercive field decreased with increasing film thickness monotonously and may be approximated by a power law Ec∝N－4/3 in the range from 30 to 200 nm, which is coincident with other conventional ferroelectric materials. The optimum thickness of hemicyanine LB multiplayer is about 60 nm and their optimum value as ferroelectric storage-devices has the same order of magnitude as P(VdF-TrEE)(n :n=70 :30).

Key words: Langmuir-Blodgett films, Ferroelectricity, Hysteresis loop, Coercive field, Optimum value