物理化学学报 >> 2009, Vol. 25 >> Issue (01): 113-115.doi: 10.3866/PKU.WHXB20090120

研究论文 上一篇    下一篇

Mg掺杂GaN纳米线的结构及其特性

薛成山; 张冬冬; 庄惠照; 黄英龙; 王邹平; 王英   

  1. 山东师范大学物理与电子科学学院半导体研究所, 济南 250014
  • 收稿日期:2008-07-17 修回日期:2008-09-16 发布日期:2008-12-31
  • 通讯作者: 薛成山 E-mail:xuechengshan@sdnu.edu.cn

Structure and Characterization of Mg-Doped GaN Nanowires

XUE Cheng-Shan; ZHANG Dong-Dong; ZHUANG Hui-Zhao; HUANG Ying-Long; WANG Zou-Ping; WANG Ying   

  1. Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, P. R. China
  • Received:2008-07-17 Revised:2008-09-16 Published:2008-12-31
  • Contact: XUE Cheng-Shan E-mail:xuechengshan@sdnu.edu.cn

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摘要： 利用类似Delta掺杂技术在硅衬底上沉积Mg:Ga2O3薄膜, 然后在850 ℃下对薄膜进行氨化, 反应后制备出大量Mg掺杂GaN纳米线. 采用扫描电子显微镜(SEM)、X射线衍射(XRD)、傅里叶变换红外(FTIR)光谱和高分辨透射电子显微镜(HRTEM)对样品进行分析.结果表明, Mg掺杂GaN纳米线具有六方纤锌矿单晶结构, 纳米线的直径在30-50 nm范围内, 长度为几十微米.

关键词: 氮化镓, 纳米线, 单晶, Mg掺杂

Abstract: Large-scale Mg-doped GaN nanowires were synthesized by ammoniating Mg:Ga2O3 thin films at 850 ℃ which were deposited on the Si substrate using the resembling Delta doping method. These GaN nanowires were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transformed infrared (FTIR) spectroscopy and high resolution transmission electron microscopy (HRTEM). The results indicated that nanowires were hexagonal wurzite GaN single crystals. The diameter of nanowires was in the range of 35-50 nm with lengths of up to several tens of micrometers.

Key words: GaN, Nanowires, Single crystal, Mg-doped