物理化学学报 >> 2025, Vol. 41 >> Issue (4): 100030.doi: 10.3866/PKU.WHXB202309045

所属专题: 新型光电功能材料

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钙钛矿薄单晶光电探测器的进展与展望

马尧, 赵欣, 陈红旭, 魏薇, 沈亮*()   

  1. 吉林大学电子科学与工程学院, 集成光电子学国家重点实验室, 吉林大学未来科学国际合作联合实验室, 长春 130012
  • 收稿日期:2023-09-28 修回日期:2023-11-04 录用日期:2023-11-06 发布日期:2023-12-20
  • 通讯作者: Email: shenliang@jlu.edu.cn; Tel.: +86-431-85168241 (沈亮)
  • 基金资助:
    吉林省国际科技合作项目(20210402079GH); 吉林省国际科技合作项目(20230402056GH); 吉林省第十九批创新创业人才项目(2023QN01); 吉林省科技发展计划(20220508037RC); 吉林大学研究生创新基金项目

Progress and Perspective of Perovskite Thin Single Crystal Photodetectors

Yao Ma, Xin Zhao, Hongxu Chen, Wei Wei, Liang Shen*()   

  1. International Center of Future Science, State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
  • Received:2023-09-28 Revised:2023-11-04 Accepted:2023-11-06 Published:2023-12-20
  • Contact: Email: shenliang@jlu.edu.cn; Tel.: +86-431-85168241 (Liang Shen)
  • Supported by:
    the International Cooperation and Exchange Project of Jilin Province(20210402079GH); the International Cooperation and Exchange Project of Jilin Province(20230402056GH); the 19th Batch of Innovative and Entrepreneurial Talent Projects in Jilin Province(2023QN01); the Project of Science and Technology Development Plan of Jilin Province(20220508037RC); the Graduate Innovation Fund of Jilin University

摘要:

金属卤化物钙钛矿材料在光电探测领域具有突出的应用前景,但是多晶薄膜材料的晶界和缺陷问题,以及体单晶材料较厚的载流子传输距离限制了其性能。通过调控纵向尺寸制备的钙钛矿薄单晶材料理论上更适合光电探测,成为新型探测器领域的研究热点。本文介绍了钙钛矿单晶生长的结晶思路和薄单晶的制备工艺,回顾了钙钛矿薄单晶光电探测器领域的代表性工作,最后讨论了目前面临的问题和未来可能的发展方向。

关键词: 钙钛矿, 光电探测器, 薄单晶, 光电材料

Abstract:

Metal halide perovskites show immense promise in photodetection applications, having been employed in the research of photodiodes, photoconductors, and phototransistors. However, the majority of current photodetectors utilizing perovskite materials rely on polycrystalline thin films, and the presence of grain boundaries and defects hinders their photoelectric performance, creating a bottleneck in further advancements. To address this issue, researchers have employed techniques such as inverse temperature crystallization (ITC) and anti-solvent vapor-assisted crystallization (AVC) to synthesize various perovskite single crystals. Bulk single crystal perovskite structures are advantageous due to their lack of grain boundaries, resulting in lower dark current and noise in photodetectors, thereby enhancing their weak light detection capabilities. Additionally, the diminished presence of grain boundaries extends the lifetime of photo-generated carriers, providing a foundation for improved detector performance. However, due to the excellent optical absorption coefficient of perovskites, the excessive thickness of bulk single crystals can only increase the probability of carrier recombination, impacting the photodetector's performance. Consequently, perovskite thin single crystal materials prepared by controlling longitudinal size have garnered significant interest in novel detector research. Various techniques, such as space-confined method, surface tension-assisted method, and vapor phase epitaxy, have been proposed to growth thin single crystals with controllable thickness. These methods have been continually optimized to enhance crystal quality. Thin single crystal perovskites not only enhance photodetector performance but also hold potential for large-area single crystal production, supporting the development of photodetector imaging arrays. This paper outlines the fundamental principles behind perovskite single crystal growth, introduces various technological approaches developed for thin perovskite single crystal growth, and analyzes the resulting materials from different growth methods. It further reviews notable studies in the realm of perovskite thin single crystal photodetectors for different device types. Finally, the paper discusses current challenges and issues in this field while offering insights into potential future directions of development.

Key words: Perovskite, Photodetector, Thin single crystal, Optoelectronic material