物理化学学报 >> 2025, Vol. 41 >> Issue (2): 100016.doi: 10.3866/PKU.WHXB202310029

所属专题： 新型光电功能材料

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外延生长具有厚度可调导电属性的非层状二维碲化锰纳米片用于p-型场效应晶体管和优异的接触电极

贺梦菲1, 陈超1, 唐月1, 孟思1, 王遵法2, 王立煜1, 行家宝1, 张欣宇1, 黄佳慧1, 卢江波3, 井红梅3, 刘翔宇2, 徐华1,*()   

  1. 1 陕西师范大学材料科学与工程学院, 应用表面与胶体化学教育部重点实验室, 陕西省先进能源器件重点实验室, 西安 710119
    2 宁夏大学化学化工学院, 银川 750021
    3 陕西师范大学物理与信息技术学院, 西安 710119
  • 收稿日期:2023-10-23 修回日期:2023-11-15 录用日期:2023-11-17 发布日期:2024-01-12
  • 通讯作者: Email: xuhua-nano@snnu.edu.cn (徐华)
  • 基金资助:
    国家自然科学基金(22222505); 国家自然科学基金(51972204); 国家自然科学基金(22375121); 中央高校基本科研业务费专项(GK202308002); 陕西省自然科学基础研究计划项目(2021JM-203); 陕西省大学生创新创业训练计划项目(S202310718158); 陕西省三秦学者创新团队项目; 陕西师范大学材料科学与工程学院创新团队项目

Epitaxial Growth of Nonlayered 2D MnTe Nanosheets with Thickness-Tunable Conduction for p-Type Field Effect Transistor and Superior Contact Electrode

Mengfei He1, Chao Chen1, Yue Tang1, Si Meng1, Zunfa Wang2, Liyu Wang1, Jiabao Xing1, Xinyu Zhang1, Jiahui Huang1, Jiangbo Lu3, Hongmei Jing3, Xiangyu Liu2, Hua Xu1,*()   

  1. 1 Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China
    2 School of Chemistry and Chemical Engineering, Ningxia University, Yinchuan 750021, China
    3 School of Physics and Information Technology, Shaanxi Normal University, Xi'an 710119, China
  • Received:2023-10-23 Revised:2023-11-15 Accepted:2023-11-17 Published:2024-01-12
  • Contact: Email: xuhua-nano@snnu.edu.cn (Hua Xu)
  • Supported by:
    the National Natural Science Foundation of China(22222505); the National Natural Science Foundation of China(51972204); the National Natural Science Foundation of China(22375121); the Fundamental Research Funds for the Central Universities(GK202308002); the Natural Science Basic Research Plan in Shaanxi Province(2021JM-203); the College Students' Innovation and Entrepreneurship Training Program(S202310718158); the Shaanxi Sanqin Scholars Innovation Team, and the Fundamental Innovation Project; Scientific Research Training Project and Young Scientist Initiative Project in School of Materials Science and Engineering

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摘要：

碲化锰(manganese telluride，MnTe)作为一种新兴的非层状二维材料，因其优异的性质以及在下一代电子和光电子器件中的巨大潜力，而受到研究学者们的广泛关注。然而，目前超薄二维MnTe的可控合成仍然是一个巨大的挑战，这限制了对其基础性质的研究和应用的深入探索。本文采用化学气相沉积方法成功合成了大面积的MnTe纳米片，并探究了其厚度对电学性质和器件应用的影响。通过提高MnTe纳米片的生长温度，样品厚度逐渐增加，晶畴尺寸从10 μm增至125 μm，形貌从三角形逐渐过度到六边形，最终生长成高度对称的圆形。结构表征和二次谐波测试表明，所制备的MnTe纳米片具有高度的结晶质量和优异的二阶非线性光学性质。此外，通过对不同厚度MnTe纳米片的电学输运测试，发现随着厚度从薄到厚，其导电特性从p型半导体逐渐转变为半金属。因此，利用半导体特性的薄层MnTe纳米片构建的光电探测器展现出出色的光响应性能。而将金属特性的厚层MnTe作为MoS2场效应晶体管的接触电极，显著提高了器件性能，如载流子迁移率可从12.76 cm2∙V−1∙s−1 (Au接触)提升到47.34 cm2∙V−1∙s−1 (MnTe接触)。

关键词: 二维材料, 碲化锰, 化学气相沉积, 场效应晶体管, 光电探测器, 接触电极

Abstract:

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) exhibit diverse structures, encompassing a broad spectrum of electronic types ranging from metal, semiconductor, to insulator and topological insulator. They hold immense potential for both Moore and more-than-Moore device applications. Among them, manganese telluride (MnTe), an emerging nonlayered 2D material, has garnered considerable attention due to its exceptional properties and significant application potential in next-generation electronic and optoelectronic devices. However, the controllable synthesis of ultra-thin 2D MnTe remains a great challenge, which hindering the comprehensive exploration of its fundamental properties and potential applications. In this study, we present the synthesis of large-area MnTe nanosheets through chemical vapor deposition growth, showcasing its thickness-dependent properties and device applications. By increasing the growth temperature from 500 to 750 ℃, the MnTe nanosheets' thickness transitions from thin-layer to a thick flake, the domain size increases from 10 to 125 μm, the morphology changes from triangle to hexagon, culminating in a highly symmetrical round shape. Structural characterization and second harmonic generation measurements reveal that the obtained MnTe nanosheets exhibit high crystallization quality and superior second-order optical nonlinearity. The field effect transistor (FET) constructed with thin-layer MnTe demonstrates a p-type semiconductor characteristic, transitioning to a semimetal feature as the thickness increases to a thick flake. Leveraging these thickness-dependent electrical conduction transition features, we explore diverse applications of MnTe with varying thicknesses. The semiconductive thin-layer MnTe, serving as the photosensitive channel in a device, achieves superior photoresponse, showcasing considerable potential for photodetection appliations. The semimetallic thick-layer MnTe, acting as the contact electrode in a MoS2 FET, significantly enhances device performance, with carrier mobility increasing from 12.76 cm2∙V−1∙s−1 (Au contact) to 47.34 cm2∙V−1∙s−1 (MnTe contact). This work lays the foundation for the controllable synthesis of nonlayered 2D MnTe and provides insights into its prospective development for constructing innovative electronic and optoelectronic devices.

Key words: 2D materials, MnTe, Chemical vapor deposition, Field effect transistor, Photodetector, Contact electrode