物理化学学报 >> 2022, Vol. 38 >> Issue (1): 2012080.doi: 10.3866/PKU.WHXB202012080

所属专题： 石墨烯的功能与应用

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表面电荷转移掺杂石墨烯的研究进展

马来鹏1,2, 任文才1,2,*(), 成会明1,2,3   

  1. 1 中国科学院金属研究所，沈阳材料科学国家研究中心，沈阳 110016
    2 中国科学技术大学材料科学与工程学院，沈阳 110016
    3 清华大学，清华-伯克利深圳研究院，深圳盖姆石墨烯研究中心，广东 深圳 518055
  • 收稿日期:2020-12-29 录用日期:2021-01-26 发布日期:2021-02-03
  • 通讯作者: 任文才 E-mail:wcren@imr.ac.cn
  • 作者简介:任文才，1973年出生。2005年获中国科学院金属研究所博士学位; 现为中国科学院金属研究所研究员、博士生导师，国家“杰出青年基金”获得者。主要研究方向为石墨烯等二维材料的制备、物性与应用
  • 基金资助:
    国家重点研发计划项目(2016YFA0200101);国家自然科学基金(51325205);国家自然科学基金(51290273);国家自然科学基金(51521091);中国科学院项目(ZDBS-LY-JSC027);中国科学院项目(XDB30000000);中国科学院项目(KGZD-EW-303-1);中国科学院项目(KGZD-EW-303-3);中国科学院项目(KGZD-EW-T06);辽宁省“兴辽英才计划”(XLYC1808013)

Progress in Surface Charge Transfer Doping of Graphene

Lai-Peng Ma1,2, Wencai Ren1,2,*(), Hui-Ming Cheng1,2,3   

  1. 1 Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
    2 School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
    3 Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen 518055, Guangdong Province, China
  • Received:2020-12-29 Accepted:2021-01-26 Published:2021-02-03
  • Contact: Wencai Ren E-mail:wcren@imr.ac.cn
  • About author:Wencai Ren. Email: wcren@imr.ac.cn
  • Supported by:
    the National Key R & D Program of China(2016YFA0200101);the National Natural Science Foundation of China(51325205);the National Natural Science Foundation of China(51290273);the National Natural Science Foundation of China(51521091);the Chinese Academy of Sciences Program(ZDBS-LY-JSC027);the Chinese Academy of Sciences Program(XDB30000000);the Chinese Academy of Sciences Program(KGZD-EW-303-1);the Chinese Academy of Sciences Program(KGZD-EW-303-3);the Chinese Academy of Sciences Program(KGZD-EW-T06);the Liaoning Revitalization Talents Program(XLYC1808013)

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摘要：

表面电荷转移掺杂是调制石墨烯电学特性的重要手段。发展高效、稳定的表面电荷转移掺杂剂对于提高石墨烯的电学和光电性能、从而推动其在电子和光电领域中的应用具有重要意义。本文围绕高效与稳定两个方面综述了近年来石墨烯表面电荷转移掺杂剂的研究现状以及掺杂石墨烯在光电器件应用方面的进展。根据掺杂剂的类型，着重介绍了最新发展的高效p型和n型掺杂剂，并概述了稳定掺杂方面的重要研究工作。此外，专门介绍了基于掺杂石墨烯透明电极的高性能光电器件。最后，根据表面电荷转移掺杂研究面临的主要挑战，对其未来的发展方向进行了展望。

关键词: 石墨烯, 掺杂, 电荷转移, 载流子浓度

Abstract:

Graphene has shown great promise in the development of next-generation electronic and optoelectronic devices owing to its atomic thickness and extraordinary electrical/optical/thermal/mechanical properties. Surface charge transfer doping is an important strategy to modulate graphene's electrical and optical properties. Compared with other doping methods, surface charge transfer doping shows distinct advantages in several aspects such as the minimized negative impact on the carrier mobility without disrupting the graphene lattice, wide range and precise control over the doping concentration, and highly efficient treatment processes without using high-temperature or ion implantation. Therefore, it is necessary to develop strong and stable surface charge transfer dopants to improve the electrical and optical performances of graphene, advancing its potential application in electronics and optoelectronics. For more than a decade, efforts has been devoted to developing diverse surface charge transfer p- and n-type dopants, including acids, gases, transition metals, alkali metals, metal chlorides, metal oxides, organics containing electron-donating/withdrawing groups, ferroelectric organics, and carbon-based materials, which serve as a wide range of ways to modulate the properties of graphene. Recently, remarkable progress has been made in realizing heavy and stable doping by surface charge transfer. In this review, we summarize the research status of surface charge transfer doping for graphene and its application in electronic and optoelectronic devices by focusing on the doping strength and stability. Initially, we survey the typical surface charge transfer doping mechanisms and widely used characterization measures, discussing their advantages and limitations. We then review the recent progress in the development of strong p- and n-type surface charge transfer dopants for graphene. For example, heavy p- and n-doping in graphene has been achieved by intercalation doping with metal chlorides and alkali metals, respectively. A large-area graphene film with stable p-doping was also realized. Of particular interest, organics are promising materials for developing emerging dopants with high structural tunability and diverse functions. We also introduce novel stable dopants and effective strategies for improving the ambient/thermal/solvent stability of typical dopants. Then, we devote a manuscript section to advances in high-performance optoelectronic devices using doped graphene electrodes with superior performances, focusing on graphene-based touch screens, organic light-emitting diodes, and organic photovoltaics. In this area, graphene-based flexible light-emitting devices have demonstrated advantages over typical tin-doped indium oxide (ITO) devices in terms of overall efficiencies. Finally, we discuss the challenges faced in developing state-of-the-art surface charge transfer dopants with future perspectives.

Key words: Graphene, Doping, Charge transfer, Carrier concentration