物理化学学报 >> 1994, Vol. 10 >> Issue (01): 61-63.doi: 10.3866/PKU.WHXB19940114

研究简报 上一篇    下一篇

光照下n-InP/溶液界面击穿过程的研究

钱道荪, 朱振华, 赵俊   

  1. 上海交通大学应用化学系， 上海200030
  • 收稿日期:1992-05-25 修回日期:1992-10-05 发布日期:1994-01-15
  • 通讯作者: 钱道荪

A Study of Breakdown Process Between n-InP/Solution Interface at Irradiation

Qian Dao-Sun, Zhu Zhen-Hua, Zhao Jun   

  1. Department of Applied Chemistry, Shanghai Jiao Tong University, Shanghai 200030
  • Received:1992-05-25 Revised:1992-10-05 Published:1994-01-15
  • Contact: Qian Dao-Sun

PDF

2636

赞

关键词: 磷化铟, 半导体电极, 光电化学, 大信号电流阶跃法

Abstract:

In this work, the tunneling breakdown of n-InP electrode using large signal current density step has been investigated. The influence of current density on the tunneling breakdown is not obvious, but the light intensities affect the breakdown severely. Some parameters are calculated during breakown and explained.

Key words: Indium phosphide, Semiconducting electrode, Photoelectrochemistry, Large signal current step method