Acta Phys. -Chim. Sin. ›› 2008, Vol. 24 ›› Issue (04): 571-575.doi: 10.1016/S1872-1508(08)60024-8

• ARTICLE • Previous Articles     Next Articles

Fabrication and Luminescent Properties of 6H-SiC/3C-SiC/6H-SiC Quantum Well Structure

LIU Jin-Feng; LIU Zhong-Liang; REN Peng; XU Peng-Shou; CHEN Xiu-Fang; XU Xian-Gang   

  1. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P. R. China; Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province, P. R. China; State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
  • Received:2007-11-12 Revised:2008-01-03 Published:2008-04-07
  • Contact: XU Peng-Shou E-mail:psxu@ustc.edu.cn

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Abstract: Quantumwell structure filmof 6H-SiC/3C-SiC/6H-SiC was fabricated on 6H-SiC(0001) with the substrate temperature of 1350 K by solid source molecular beam epitaxy (SSMBE) through the variation of Si flux rate. The crystal polytypes and luminescent properties of the film were characterized by reflection high energy electron diffraction (RHEED) and photoluminescence (PL), respectively. The results of RHEEDindicated that the filmwas 6H-SiC/3C-SiC/6H-SiC with the quantum well structure. The results of PL excited by He-Gd laser at room temperature showed that there were intense emissions in the range of 480-600 nm, which could not be observed from the substrate. The fitting peaks were consistent with the results calculated from the model of quantum well structure, which showed that such intense emissions were probably fromthe quantumwells with different widths.

Key words: Quantumwell, SiC, SSMBE, RHEED, Photoluminescence