Acta Phys. -Chim. Sin. ›› 2010, Vol. 26 ›› Issue (02): 299-303.doi: 10.3866/PKU.WHXB20100226

• ELECTROCHEMISTRY • Previous Articles     Next Articles

Photoelectrochromic Properties of TiO2-xNx/NiO Bilayer Thin Films

JIANG Lei, HUANG Hui, WANG Chun-Tao, ZHANG Wen-Kui, GAN Yong-Ping, TAO Xin-Yong   

  1. College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014, P. R. China; College of Electromechanical Engineering, Zhejiang Ocean University, Zhoushan 316000, Zhejiang Province, P. R. China
  • Received:2009-08-17 Revised:2009-11-11 Published:2010-01-26
  • Contact: HUANG Hui


N-doped TiO2 films were prepared on indium tin oxide(ITO) conducting glass by dc-reactive magnetron sputtering using a Ti target in an O2/N2/Ar mixture gas in combination with heat-treatment at 300-500 ℃. The microstructure, optical and photoelectrochemical properties of the as-formed filmswere characterized byX-ray diffraction (XRD), X-ray photoelectron spectroscopy(XPS), scanning electron microscopy(SEM) and UV-Vis transmittance spectrum. Highly porous NiO was deposited onto the N-doped TiO2 layer by chemical bath deposition to obtain ITO/TiO2-xNx/NiO bilayer thin films and they exhibited excellent and noticeable photoelectrochromism. The TiO2-xNx film annealed at 400 ℃ showed the highest photocurrent response. The color of films changed from colorless to brown and the transmittance varied from 79.0% to 12.6% at 500 nmafter 1 h of irradiation.

Key words: Photoelectrochromism, N-doped TiO2, NiO, Photoelectrochemical property, Thin film