溶剂工程调控钙钛矿薄膜中PbI2和PbI2(DMSO)的形成

doi:10.3866/PKU.WHXB202003022

Abstract

Abstract:

Perovskite solar cells (PSCs) attract much attention for their high efficiency and low processing cost. Power conversion efficiencies (PCEs) higher than 25% have been reported in literature, demonstrating the excellent application prospect of PSCs. In general, the crystallinity and the film composition of perovskite thin films are significant factors in determining device performance. Much effort has been made to control the growth process of perovskite films through the use of additives, passivation layers, special atmosphere treatments, precursor regulation etc. Among these methods, precursor solvent engineering is a simple and direct way to control the perovskite quality, but the controllability of components through solvent engineering is still difficult and has not yet been reported. Herein, we report the controlled formation of PbI₂ and PbI₂ with dimethyl sulfoxide (DMSO) nano domains through precursor solvent engineering. In particular, tuning the solvent content of the dimethyl sulfoxide: 1, 4-butyrolactone: N, N-dimethylformamide (DMSO : GBL : DMF) in the perovskite precursor solution, controlled the content of PbI₂ and PbI₂(DMSO) domains. Due to the lower boiling point and weaker coordination of DMF relative to DMSO, part of methylammonium iodide (MAI) would escape from the wet films during the evaporation process. Therefore, the PbI₂(DMSO) can't completely convert to perovskite crystals and is retained in the final films as residual PbI₂(DMSO) domains. Both UV-vis absorption spectrum and XRD spectrum confirmed the existence of PbI₂ and PbI₂(DMSO) domains. Importantly, the content of PbI₂(DMSO) was controllable by simply changing the relative proportion of DMF. With an increase in the DMF content, the residual PbI₂(DMSO) domains gradually increase. In addition, the influence of PbI₂ and PbI₂(DMSO) domains on the device performance was systematically investigated. The formation of PbI₂(DMSO) domains caused a decrease in external quantum efficiency (EQE) of the device over 300–425 nm, and consequently decreased the device performance. That was because the PbI₂(DMSO) domain has strong absorption over 300–425 nm. Therefore, the PbI₂(DMSO) domains would absorb the photons over 300–425 nm prior to the perovskite, however the photons absorbed by the PbI₂(DMSO) domains are not converted into the photocurrent. Thus, the perovskite solar cell containing PbI₂(DMSO) showed an EQE loss over 300–425 nm in the EQE spectra. This work provides a simple method to control the components, especially the content of the PbI₂(DMSO) domains, in perovskite films through regulating the precursor solvent. Additionally, this work revealed a PbI₂(DMSO) domain related EQE loss phenomenon, highlighting the importance of controlling this component.

Key words: Perovskite solar cell, PbI₂, PbI₂(DMSO), Perovskite precursor, External quantum efficiency

Click here to download Supporting Info material in PDF type

Wusong Zha, Lianping Zhang, Long Wen, Jiachen Kang, Qun Luo, Qin Chen, Shangfeng Yang, Chang-Qi Ma. Controllable Formation of PbI₂ and PbI₂(DMSO) Nano Domains in Perovskite Films through Precursor Solvent Engineering[J]. Acta Phys. -Chim. Sin. 2022, 38(3), 2003022. doi: 10.3866/PKU.WHXB202003022

Figures/Tables 9

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DMF content^a	Layer thickness/nm	V_OC/V	J_SC/(mA·cm^-2)	FF	PCE_average/% ^b	PCE_max/%
0%	290 ± 11	1.01	18.83 ± 0.06	0.70 ± 0.01	13.07 ± 0.24	13.31
5%	285 ± 13	0.98	19.30 ± 0.12	0.72 ± 0.00	13.53 ± 0.09	13.62
10%	304 ± 14	1.00	19.51 ± 0.12	0.72 ± 0.01	13.85 ± 0.20	14.05
15%	320 ± 12	1.02	19.49 ± 0.16	0.70 ± 0.02	13.60 ± 0.36	13.92
20%	340 ± 14	1.00	19.12 ± 0.09	0.70 ± 0.01	13.32 ± 0.06	13.38
25%	367 ± 9	0.99	19.29 ± 0.11	0.65 ± 0.02	12.23 ± 0.18	12.41

MAI: PbI₂ ^a	Layer Thickness	V_oc/V	J_sc/(mA·cm^-2)	FF	PCE_average/% ^b	PCE_max/%
1.20M : 1.4M	346 ± 8	1.05	17.78 ± 0.14	0.75 ± 0.01	14.04 ± 0.15	14.19
1.25M : 1.4M	343 ± 10	1.02	18.03 ± 0.16	0.78 ± 0.00	14.13 ± 0.21	14.34
1.30M : 1.4M	346 ± 9	1.02	18.73 ± 0.13	0.73 ± 0.01	13.84 ± 0.11	13.95
1.35M : 1.4M	342 ± 13	0.85	18.10 ± 0.09	0.77 ± 0.01	11.71 ± 0.14	11.85
1.40M: 1.4M	344 ± 11	0.72	17.76 ± 0.11	0.77 ± 0.00	9.77 ± 0.08	9.85
1.45M : 1.4M	341 ± 10	1.00	19.76 ± 0.08	0.78 ± 0.01	15.51 ± 0.10	15.61

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Controllable Formation of PbI₂ and PbI₂(DMSO) Nano Domains in Perovskite Films through Precursor Solvent Engineering

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