Pd在p型单晶硅(100)表面自催化化学沉积

doi:10.3866/PKU.WHXB20071117

Acta Phys. -Chim. Sin. ›› 2007, Vol. 23 ›› Issue (11): 1743-1746.doi: 10.3866/PKU.WHXB20071117

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Autocatalytic Electroless Deposition of Palladium onto p-Silicon (100)

CHEN Yang; JING Fen-Ning; YE Wei-Chun; WANG Chun-Ming

College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000, P. R. China

Received:2007-04-18 Revised:2007-07-26 Published:2007-11-01
Contact: WANG Chun-Ming E-mail:wangcm@lzu.edu.cn

Abstract

Abstract: The autocatalytic electroless deposition (AED) of palladiumonto p-silicon (100) with hydrogen termination was studied. Pd films were prepared by immersing the hydrogen-terminated silicon wafers into conventional HF-PdCl2-HCl solution at room temperature. The anodic stripping behaviors and morphologies of the Pd deposits were studied using cyclic voltammetry (CV), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The results showed that the Pd growth was in Volmer-Weber (VW) mode and the Pd filmhad good adhesion.

Key words: Autocatalytic electroless deposition, Anodic stripping, Palladium, Atomic force microscopy, p-Silicon (100)

CHEN Yang; JING Fen-Ning; YE Wei-Chun; WANG Chun-Ming. Autocatalytic Electroless Deposition of Palladium onto p-Silicon (100)[J]. Acta Phys. -Chim. Sin. 2007, 23(11), 1743-1746. doi: 10.3866/PKU.WHXB20071117

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Autocatalytic Electroless Deposition of Palladium onto p-Silicon (100)

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