Acta Phys. -Chim. Sin. ›› 1999, Vol. 15 ›› Issue (04): 356-360.doi: 10.3866/PKU.WHXB19990413

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Preparation of Cu/Co Layer Film by Electrodeposition on Semiconductor Silicon

Liu Bing, Gong Zheng-Lie, Yao Su-Wei, Guo He-Tong, Yuan Hua-Tang, Zhang Yun-shi   

  1. Institute of New Energy Material Chemistry,Nankai University,Tianjin 300071|Deparmemt of Physics,Tianjin Institute of Technology,300191|Department od Applied Chemistry,Tianjin University,Tianjin 300072
  • Received:1998-06-04 Revised:1998-09-01 Published:1999-04-15
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Abstract:

The Cu/Co layer film on the semiconductor silicon was obtained by electrodeposition for the first time. The results of current - time transient curves and STM image showed that the wt of Cu film is two-dimensional while an island three-dimension growth for the Co film was formed. The addition of CrO3 changed the current - time transient curves, and affected the growth of crystal. The addition of CrO3 decreased the nucleation rate of Cu, while it changed the shape of current-time transient curves of the deposition of Co at higher deposition potentials. For the deposition of Co, addition of CrO3 can form the adhesive film [Co. xCr2O3' YH2O]ad or [CoOH. nCr(OH)3]ad, which decreased the nucleation rate of Co.

Key words: p-Si, Electrodeposition, Cu/Co layer film