Ga和Cu/In衬底上电沉积金属Ga

doi:10.3866/PKU.WHXB201205153

Abstract

Abstract:

We investigate the electrodeposition of gallium metallic precursor on gallium and Cu/In substrates from acidic aqueous solutions. The effect of the supporting electrolyte and the solution pH value for the electrodeposition of Ga is investigated by cyclic voltammetry. During Ga electrodeposition, gallium gradually diffuses into the film, and reacts with CuIn alloy to produce CuGae₂ at the Cu/In interface. We use triethanolamine to protect the Cu/In and Ga films from being oxidized, and thus this improves the current efficiency of Ga-electrodeposition. The Cu-In-Ga films are annealed in an Se atmosphere to produce In_1-xGa_xSee₂(CIGS) thin films with high quality, and the efficiency of the solar cell prepared using these films is 9.42%.

Key words: Electrodeposition, Cu(In_1-xGa_x)Se₂, Cyclic voltammetry, Metallic precursor, Solar cell

ZHANG Chao, AO Jian-Ping, WANG Li, JIANG Tao, SUN Guo-Zhong, HE Qing, ZHOU Zhi-Qiang, SUN Yun. Electrodepositied Gallium on Gallium and Copper/Indium Substratess[J].Acta Phys. -Chim. Sin., 2012, 28(08): 1913-1922.

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Electrodepositied Gallium on Gallium and Copper/Indium Substratess

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