Acta Phys. -Chim. Sin. ›› 2009, Vol. 25 ›› Issue (09): 1721-1724.doi: 10.3866/PKU.WHXB20090908

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Fabrication and Characterization of In/ZnO-SiOx Core-Shell Nanocable Heterostructures

QI Jun-Jie, YANG Ya, LIAO Qing-Liang, HUANG Yun-Hua, LIU Juan, ZHANG Yue   

  1. Department of Materials Physics&Chemistry, University of Science and Technology Beijing, Beijing 100083, P. R. China|State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China
  • Received:2009-03-05 Revised:2009-06-04 Published:2009-09-03
  • Contact: ZHANG Yue E-mail:yuezhang@ustb.edu.cn

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Abstract:

Indiumdoped ZnO-SiOx core-shell nanocable heterostructures were successfully fabricated by introducing In ions into the raw material via a simple thermal evaporation process. X-ray diffraction (XRD), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDS) were used to investigate the structure of the In/ZnO-SiOx core-shell fibers. Results indicated that the core zone of ZnO nanocables is single crystalline In/ZnO with a wurtzite structure and the shell zone is a SiOx amorphous layer. The nanocables have high aspect ratio of more than 100 with widths of 30-60 nm. The growth mechanismof the nanocable heterostructures is different fromthe commonly reported metal-seeded vapor-liquid-solid (VLS) mechanism. The synthesis of core-shell structures reveals the general potential of radial heterostructure growth for the development of nanowire-based devices.

Key words: Nanostructure, In-doping, ZnO, Nanocable, Growth mechanism