物理化学学报 >> 1997, Vol. 13 >> Issue (11): 965-968.doi: 10.3866/PKU.WHXB19971102

通讯 上一篇    下一篇

电化学微/纳加工分辨率的影响因素及对策

祖沿兵,谢雷,罗瑾,毛秉伟,田昭武   

  1. 固体表面物理化学国家重点实验室，厦门大学化学系，厦门 361005
  • 收稿日期:1997-08-11 修回日期:1997-09-24 发布日期:1997-11-15
  • 通讯作者: 祖沿兵

On the Etching Revolution of Electrochemical Micro-(Nano-) Fabrication Technique—Its Limit and Solution

Zu Yan-Bing,Xie Lei,Luo Jin,Mao Bing-Wei,Tian Zhao-Wu   

  1. State Key Laboratory for Physical Chemistry of the Solid Surface,Department of Chemistry,Xiamen University,Xiamen 361005
  • Received:1997-08-11 Revised:1997-09-24 Published:1997-11-15
  • Contact: Zu Yan-Bing

PDF

2584

赞

关键词: 微/纳加工, 扫描电化学显微镜, 约束刻蚀剂层技术, 硅

Abstract:

 The etching resolution of electrochemical fabrication technique is influenced significantly by the diffusion layer of the etchant. It has been shown that a fast etching rate can achieve higher etching resolution due to so-called heterogeneous scavenging effect, while a lower etching rate will result in rather lower etching resolution. For the latter case, the confined etchant layer technique(CELT) has been employed to improve the etching resolution. i. e., a certain redox couple which can consume the etchant homogeneously and rapidly was added to the solution. The homogeneous scavenging effect confined the etchant within a narrow layer around the electrode surface and much improved etching resolution was achieved. Using the CELT and a needle-shaped microelectrode, an etching spot of several micro-meters was obtained at silicon wafer surface.

Key words: Micro-(nano-)fabrication, Scanning electrochemical microscopy, Confined etchant layer technique, Silicon