物理化学学报 >> 2025, Vol. 41 >> Issue (3): 100029.doi: 10.3866/PKU.WHXB202407025

所属专题: 新型光电功能材料

论文 上一篇    

NbSe2纳米片优化钙钛矿太阳能电池的埋底界面

董鹏宇1, 姜月1,*(), 杨正池1, 刘立城1, 李固1, 文鑫洋1, 王祯1,*(), 施信波2, 周国富3, 刘俊明4, 高进伟5,1,*()   

  1. 1 华南师范大学, 华南先进光电子研究院, 先进材料研究所, 广州 510006
    2 链行走新材料科技(广州)有限公司, 广州 511462
    3 华南师范大学, 华南先进光电子研究院, 广东省光信息材料与技术重点实验室暨电子纸显示器研究所, 广州 510006
    4 南京大学固体微结构实验室, 南京 210093
    5 赣南师范大学物理与电子信息学院, 先进光电子研究中心, 江西赣州 341000
  • 收稿日期:2024-07-26 修回日期:2024-08-21 录用日期:2024-08-30 发布日期:2024-12-14
  • 通讯作者: Email: yuejiang@m.scnu.edu.cn (姜月)zhenwang@m.scnu.edu.cn (王祯)gaojinwei@m.scnu.edu.cn (高进伟)
  • 基金资助:
    国家自然科学基金(52472193); 国家自然科学基金(62105124); 广东省基础与应用基础研究基金(2022A1515010264); 广东省基础与应用基础研究基金(2022B1515120006); 广州市科技计划(202201000008); 中国博士后科学基金(2022M721215)

NbSe2 Nanosheets Improved the Buried Interface for Perovskite Solar Cells

Pengyu Dong1, Yue Jiang1,*(), Zhengchi Yang1, Licheng Liu1, Gu Li1, Xinyang Wen1, Zhen Wang1,*(), Xinbo Shi2, Guofu Zhou3, Jun-Ming Liu4, Jinwei Gao5,1,*()   

  1. 1 Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
    2 Chain Walking New Material Technology (Guangzhou) Co. LTD., Guangzhou 511462, China
    3 Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
    4 Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
    5 Centre for Advanced Optoelectronics, School of Physics and Electronic Information, Gannan Normal University, Ganzhou 341000, Jiangxi Province, China
  • Received:2024-07-26 Revised:2024-08-21 Accepted:2024-08-30 Published:2024-12-14
  • Contact: Email: yuejiang@m.scnu.edu.cn (Yue Jiang)zhenwang@m.scnu.edu.cn (Zhen Wang)gaojinwei@m.scnu.edu.cn (Jinwei Gao)
  • Supported by:
    National Natural Science Foundation of China(52472193); National Natural Science Foundation of China(62105124); the Guangdong Basic and Applied Basic Research Foundation(2022A1515010264); the Guangdong Basic and Applied Basic Research Foundation(2022B1515120006); the Science and Technology Programs of Guangzhou(202201000008); the China Postdoctoral Science Foundation(2022M721215)

摘要:

有机-无机金属卤化物钙钛矿太阳能电池(PSC)因其优异的光伏性能和低成本制造工艺成为下一代太阳能电池的有利候选者。其中,氧化锡(SnO2)具有优异电荷迁移率和电子提取效率,广泛用作钙钛矿太阳电池的电子传输层(ETL),相应的n-i-p型单结钙钛矿器件已获得高达26.21%的认证效率。SnO2层作为钙钛矿薄膜生长的基底,对钙钛矿埋底界面的形成和薄膜的结晶质量起着决定性作用。然而,由于SnO2和钙钛矿的热膨胀系数存在差异,在后续的退火过程不可避免地会在钙钛矿薄膜中产生残余应力导致晶格畸变,这严重影响了电池的光电性能和稳定性。针对残余应力释放问题,研究人员将不同的聚合物和小分子作为缓冲层应用于SnO2/钙钛矿界面,并取得了一些进展。而与这些绝缘材料相比,二维(2D)纳米片具有高载流子迁移率、宽带隙和优异光吸收性能等特性,是很有前景的界面材料。尤其,2D NbSe2纳米片具有溶液可加工性、高固有电导率以及干净光滑表面(即没有悬空键)等优点。因此,本工作在SnO2/钙钛矿界面引入2D NbSe2纳米片以释放钙钛矿薄膜中的残余拉伸应变,并构建更匹配的能级排列结构。最终,我们制备出了高质量的钙钛矿薄膜,并将钙钛矿太阳能电池效率从21.81%提高到24.05%。另外,文本的未封装电池在大气条件下老化1000 h后,仍保持了91%的初始效率。

关键词: 钙钛矿太阳能电池, 二维材料, 应变释放, 能级排列

Abstract:

Organic-inorganic metal halide perovskite solar cells (PSCs) are favorable candidates for next-generation solar cells, due to their excellent photovoltaic performance and promising low-cost fabrication process. Particularly, tin oxide (SnO2), with excellent charge mobility and extraction efficiency, is widely used as electron transport layers (ETLs), and the efficiency of the corresponding n-i-p-type perovskites has been certified as high as 26.21% in single-junction devices. The SnO2 layer serves as the substrate for the growth of perovskite films, determining the crystalline quality and the buried interface of perovskite films. However, due to the different thermal expansion coefficient of SnO2 and perovskite, the subsequent perovskite annealing process leads to the residual stress at the buried interfaces and lattice distortion in the perovskite films, which seriously affects their optoelectronic performance and stability. To release this interfacial stress, researchers have made some progress by applying different polymers and small molecules to the SnO2/perovskite interface as a buffer layer. Among these, two-dimensional (2D) nanosheets with high carrier mobility, a wide bandgap range, and excellent optical absorption properties are promising, especially 2D NbSe2 nanosheets showing the advantages of solution-processability, high intrinsic conductivity and clean smooth surface, namely without dangling bonded atoms. Herein, 2D NbSe2 nanosheets have been introduced at the SnO2/perovskite interface to release the undesired residual tensile strain in perovskite films and to form a more matched interfacial energy level alignment. As a result, we have obtained a high-quality perovskite film and further an improved photovoltaic performance. The PCE has been increased from 21.81% to 24.05%. The unencapsulated cell maintained 91% of the initial efficiency after aging over 1000 h under atmospheric condition.

Key words: Perovskite solar cells, Two-dimensional material, Strain relief, Cascade energy alignment