MOF衍生的g-C3N4/ZnIn2S4 S型异质结：界面工程增强光催化NO转化

doi:10.1016/j.actphy.2025.100175

摘要/Abstract

摘要：

为应对大气中日益严峻的氮氧化物(NO_x)污染问题，亟需开发兼具高效性与高选择性的光催化剂。本研究构建了g-C₃N₄/ZnIn₂S₄ (CN/ZIS) S型异质结光催化剂，其中通过MOF衍生策略合成了具有中空管状形貌的ZnIn₂S₄，g-C₃N₄则作为高效电子转移平台。优化后的CN/ZIS-0.1在可见光照射下表现出显著提升的光催化性能，NO去除效率达67.29%，显著高于原始g-C₃N₄ (41.41%)和ZIS (27.8%)；同时NO向硝酸盐的选择性转化率达到77.47%，亦明显优于g-C₃N₄ (49.01%)。材料表征结果表明，CN/ZIS-0.1不仅有更宽的光吸收范围，其独特结构还提供了更多反应位点。光电化学测试与DFT计算进一步证实，CN/ZIS界面形成的内建电场(BIEF)驱动光生电子向g-C₃N₄表面迁移、空穴向ZIS表面定向迁移，从而促进关键活性物种生成并增强NO吸附。本工作不仅证明了MOF衍生中空结构与二维半导体耦合构建S型异质结在NO光催化氧化中的潜力，还为开发高选择性NO光催化剂提供有效策略。

关键词: 光催化, NO转化, g-C₃N₄/ZnIn₂S₄异质结, 界面工程, S型异质结

Abstract:

Addressing the growing challenge of nitrogen oxides (NO_x) pollution in the atmosphere requires the development of photocatalysts with both high efficiency and strong selectivity. In this study, a g-C₃N₄/ZnIn₂S₄ (CN/ZIS) S-scheme heterojunction photocatalyst was constructed, in which ZnIn₂S₄ with a hollow tubular morphology was synthesized via a MOF-derived strategy, and g-C₃N₄ served as an efficient electron transfer platform. The optimized CN/ZIS-0.1 exhibited remarkable photocatalytic efficacy under visible-light radiation, attaining a NO removal efficiency of 67.29%, markedly surpassing that of pristine g-C₃N₄ (41.41%) and ZIS (27.8%). Additionally, a high NO-to-nitrate selectivity of 77.47% was attained, exceeding that of pristine g-C₃N₄ (49.01%). The material characterization results revealed that CN/ZIS-0.1 not only has a wider light absorption range but also its unique structure provides more reaction sites. Further photoelectrochemical measurements and DFT simulations confirm that the built-in electric field (BIEF) formed at the CN/ZIS interface facilitates the directional migration of photogenerated electrons towards the g-C₃N₄ surface, and photogenerated holes migrate towards the surface of ZIS, thereby promoting the generation of key reactive species and enhancing NO adsorption. This work not only demonstrates the potential of constructing S-scheme heterojunctions by coupling MOF-derived hollow structures with two-dimensional semiconductors for NO oxidation, but also offers an effective strategy for developing highly selective NO photocatalysts.

Key words: Photocatalysis, NO conversion, g-C₃N₄/ZnIn₂S₄ heterojunction, Interface engineering, S-scheme

邱艳平, 张佳桐, 李林萍, 高旸钦, 李宁, 戈磊. MOF衍生的g-C₃N₄/ZnIn₂S₄ S型异质结：界面工程增强光催化NO转化[J]. 物理化学学报, 2026, 42(4), 100175. doi: 10.1016/j.actphy.2025.100175

Yanping Qiu, Jiatong Zhang, Linping Li, Yangqin Gao, Ning Li, Lei Ge. MOF-derived g-C₃N₄/ZnIn₂S₄ S-scheme heterojunction: interface-engineering enhanced photocatalytic NO conversion[J]. Acta Phys. -Chim. Sin. 2026, 42(4), 100175. doi: 10.1016/j.actphy.2025.100175

链接本文: https://www.whxb.pku.edu.cn/CN/10.1016/j.actphy.2025.100175

https://www.whxb.pku.edu.cn/CN/Y2026/V42/I4/100175

图/表 6

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MOF衍生的g-C₃N₄/ZnIn₂S₄ S型异质结：界面工程增强光催化NO转化

MOF-derived g-C₃N₄/ZnIn₂S₄ S-scheme heterojunction: interface-engineering enhanced photocatalytic NO conversion

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