物理化学学报 >> 2007, Vol. 23 >> Issue (01): 55-58.doi: 10.1016/S1872-1508(07)60005-9

研究论文 上一篇    下一篇

Sn掺杂ZnO半导体纳米带的制备、结构和性能

陈红升;齐俊杰;黄运华;廖庆亮;张跃   

  1. 北京科技大学材料物理与化学系, 新金属材料国家重点实验室, 北京 100083
  • 收稿日期:2006-07-21 修回日期:2006-08-28 发布日期:2007-01-08
  • 通讯作者: 张跃 E-mail:Yuezhang@ustb.edu.cn

Synthesis, Structure and Properties of Sn-doped ZnO Nanobelts

CHEN Hong-Sheng;QI Jun-Jie;HUANG Yun-Hua;LIAO Qing-Liang;ZHANG Yue   

  1. Department of Materials Physics and Chemistry; State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, P. R. China
  • Received:2006-07-21 Revised:2006-08-28 Published:2007-01-08
  • Contact: ZHANG Yue E-mail:Yuezhang@ustb.edu.cn

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摘要： 在无催化剂的条件下, 利用碳热还原反应气相沉积法制备出了高产率单晶Sn掺杂ZnO纳米带. XRD和TEM研究表明纳米带为结晶完好的纤锌矿结构, 生长方向沿[0001], EDS分析表明纳米带中Sn元素含量约为1.9%. 室温光致发光谱(PL)显示掺锡氧化锌纳米带存在强的绿光发射峰和较弱的紫外发射峰, 谱峰峰位中心分别位于494.8 nm和398.4 nm处, 并对发光机制进行了分析. 这种掺杂纳米带有望作为理想的结构单元应用于纳米尺度光电器件领域.

关键词: Sn掺杂, 纳米带, ZnO, 光致发光, 生长机理

Abstract: Single crystalline Sn-doped ZnO nanobelts were successfully synthesized by the carbon thermal reduction deposition process without using any catalyst. XRD investigation confirmed that the products were the wurtzite structure of ZnO. SEM, EDS, and TEM analyses showed that the Sn-doped ZnO nanostructures contained a belt-like morphology with Sn doping content about 1.9%, and the growth direction of nanobelts was along the [0001] direction. A weak UV emission peak at around 398.4 nm and a strong green emission peak at around 494.8 nm were observed at room temperature. The luminescence mechanism of the Sn/ZnO nanobelts was also discussed. These nanobelts were promising building blocks for fabrication of nanoscale optoelectronic devices.

Key words: Sn-doped, Nanobelt, ZnO, Photoluminescence, Growth mechanism