高效光电调控钙钛矿量子点阻变存储性能

doi:10.3866/PKU.WHXB202301033

物理化学学报 >> 2023, Vol. 39 >> Issue (12): 2301033.doi: 10.3866/PKU.WHXB202301033

高效光电调控钙钛矿量子点阻变存储性能

任书霞¹^,², 杨铮¹^,², 安帅领¹^,², 孟婕¹^,², 刘晓敏², 赵晋津¹^,*()

¹ 河北师范大学化学与材料科学学院, 河北省无机纳米材料重点实验室, 石家庄 050024
² 石家庄铁道大学材料科学与工程学院, 低碳高效能量转换材料与器件研究所, 石家庄 050043

收稿日期:2023-01-24 录用日期:2023-03-07 发布日期:2023-03-09
通讯作者: 赵晋津 E-mail:jinjinzhao2012@163.com
基金资助:
国家自然科学基金(U2130128);国家自然科学基金(11772207);国家自然科学基金(U21A20430);河北省教育厅自然科学基金(ZD2020192);河北省市场监管局科技计划(2023ZC03);中央引导地方科技发展资金(216Z4302G);河北省创新能力提升计划(22567604H);京津冀基础研究合作专项(H2022205047);京津冀基础研究合作专项(22JCZXJC00060)

High-Efficiency Photoelectric Regulation of Resistive Switching Memory in Perovskite Quantum Dots

Shuxia Ren¹^,², Zheng Yang¹^,², Shuailling An¹^,², Jie Meng¹^,², Xiaomin Liu², Jinjin Zhao¹^,*()

¹ Hebei Key Laboratory of Inorganic Nano-materials, College of Chemistry and Materials Science, Hebei Normal University, Shijiazhuang 050024, China
² School of Materials Science and Engineering, Institute of Materials for Energy Conversion, Shijiazhuang Tiedao University, Shijiazhuang 050043, China

Received:2023-01-24 Accepted:2023-03-07 Published:2023-03-09
Contact: Jinjin Zhao E-mail:jinjinzhao2012@163.com
Supported by:
the National Natural Science Foundation of China(U2130128);the National Natural Science Foundation of China(11772207);the National Natural Science Foundation of China(U21A20430);the Natural Science Foundation of Hebei Education Department(ZD2020192);the Hebei Administration for Market Supervision Science and Technology Project List(2023ZC03);the Central Government Guiding Local Science and Technology Development Project(216Z4302G);the Innovation Capability Improvement Plan Project of Hebei Province(22567604H);the Basic Research Cooperation Special Foundation of Beijing-Tianjin-Hebei Region(H2022205047);the Basic Research Cooperation Special Foundation of Beijing-Tianjin-Hebei Region(22JCZXJC00060)

摘要/Abstract

摘要：

光电阻变存储器(RRAM)因其微型化、集成化和多功能等优点成为下一代非易失性存储器中最有前途的竞争者。采用低温旋涂法合成具有绿色荧光的无机CsPbBr₃量子点(QDs)为阻变功能层，制备了高效光电调控的Ag/CsPbBr₃ QDs/ITO RRAM器件。该器件具有良好的抗疲劳性能和保持特性。在光照触发下，Ag/CsPbBr₃ QDs/ITO器件的开关比(ON/OFF比)约为3.2 × 10³，较暗态增大了约24倍；写入电压(V_SET)为2.88 V，较暗态降低了约13.3%。电场作用下Br⁻和Ag⁺双离子迁移形成混合导电细丝的通断是Ag/CsPbBr₃ QDs/ITO器件阻变的主要机制。经光照激发作用，CsPbBr₃ QDs薄膜内缺陷密度的减少促进光电流的增大，促进了Ag/CsPbBr₃ QDs/ITO器件低阻态(LRS)阻值和V_SET减小、进而提高器件ON/OFF比。高效光电调控全无机钙钛矿RRAM技术推动了高密度信息存储器的快速发展。

关键词: 钙钛矿, 光电调控, 阻变存储器, CsPbBr₃, 离子迁移

Abstract:

Photoelectric resistive switching memory (RRAM) is the most promising competitor in the next generation of non-volatile memory (NVM) owing to its miniaturization, integration, and versatility advantages. A low-temperature spin coating method is deployed to synthesize inorganic CsPbBr₃ quantum dots (QDs) with green fluorescence. Then, flexible photoelectrical dual-controlled Ag/CsPbBr₃ QDs/indium tin oxide (ITO) RRAM devices with high efficiency are prepared, in which the switching behavior is modified by both electric field and light illumination. The as-prepared device demonstrated forming-free bipolar resistive switching behavior in the presence and absence of light. The switching voltages (V_SET) show significant reductions compared to the dark condition, and the hysteresis windows considerably increase under illumination. These indicate a higher ON/OFF ratio and lower energy consumption under illumination than in the dark for the Ag/CsPbBr₃ QDs /ITO device. The ON/OFF ratio of the Ag/CsPbBr₃ QDs /ITO device is about 3.2×10³ under illumination, about 24 times higher than that in the dark state. The V_SET is 2.88 V, approximately 13.3% lower than the dark state. These results are further confirmed by the resistive switching behavior of the 36 memory cells randomly selected in the Ag/CsPbBr₃ QDs /ITO device. Moreover, the devices exhibit good fatigue and retention performance. No noticeable degradation occurre in the high resistance state (HRS) and low resistance state (LRS) even after 500 consecutive cycles. The resistance remain stable for a long retention time exceeding 5000 s. The large ON/OFF ratio, good endurance, and retention properties of the Ag/CsPbBr₃ QDs: GO/ITO device are sufficient for a photoelectric regulation NVM device. Based on the double logarithmic fitting curves during the switching process, it is assumed that the device has the same conduction mechanism under dark and illumination conditions, which is dominated by both ohmic behavior and space charge limited current (SCLC) mechanism in the HRS, and only by the ohmic conduction in the LRS. The primary resistive switching mechanism in the Ag/CsPbBr₃ QDs/ITO devices is enabled by the formation and rupture of the hybrid conductive filament composed of Br^- vacancies and Ag atom owing to both Br^- and Ag⁺ ion migration under an electric field. The main reason for the declining LRS resistance, resulting in the increment of the ON/OFF ratio and V_SET of the above devices, is derived from the increasing photocurrent promoted by the decreasing defect density in CsPbBr₃ QDs films under illumination. High-efficiency photoelectronic regulatory perovskite materials will improve the development of high-density memory RRAM technology.

Key words: Perovskite, Photoelectric regulation, Resistive switching memory, CsPbBr₃, Ion migration

任书霞, 杨铮, 安帅领, 孟婕, 刘晓敏, 赵晋津. 高效光电调控钙钛矿量子点阻变存储性能[J]. 物理化学学报, 2023, 39(12), 2301033. doi: 10.3866/PKU.WHXB202301033

Shuxia Ren, Zheng Yang, Shuailling An, Jie Meng, Xiaomin Liu, Jinjin Zhao. High-Efficiency Photoelectric Regulation of Resistive Switching Memory in Perovskite Quantum Dots[J]. Acta Phys. -Chim. Sin. 2023, 39(12), 2301033. doi: 10.3866/PKU.WHXB202301033

链接本文: https://www.whxb.pku.edu.cn/CN/10.3866/PKU.WHXB202301033

https://www.whxb.pku.edu.cn/CN/Y2023/V39/I12/2301033

图/表 5

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高效光电调控钙钛矿量子点阻变存储性能

High-Efficiency Photoelectric Regulation of Resistive Switching Memory in Perovskite Quantum Dots

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