物理化学学报 >> 2008, Vol. 24 >> Issue (10): 1912-1916.doi: 10.3866/PKU.WHXB20081030

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三元荆棘状Zn1-xCdxO纳米结构及其光致发光特性

张志军; 王发展; 刘勃; 原思聪   

  1. 西安建筑科技大学材料科学与工程学院, 西安 710055; 西安建筑科技大学机电工程学院, 西安 710055
  • 收稿日期:2008-05-04 修回日期:2008-07-03 发布日期:2008-10-08
  • 通讯作者: 王发展 E-mail:wangfz10_1@163.com;zzj811@163.com

Structural and Photoluminescent Properties of Ternary Zn1-xCdxO Bramble-like Nanostructures

ZHANG Zhi-Jun; WANG Fa-Zhan; LIU Bo; YUAN Si-Cong   

  1. School of Materials Science and Engineering, Xi’an University of Architecture &Technology, Xi’an 710055, P. R. China; School of Mechanical and Electrical Engineering, Xi’an University of Architecture&Technology, Xi’an 710055, P. R. China
  • Received:2008-05-04 Revised:2008-07-03 Published:2008-10-08
  • Contact: WANG Fa-Zhan E-mail:wangfz10_1@163.com;zzj811@163.com

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摘要： 以锌粉(Zn)、镉粉(Cd)为源材料, 金(Au)做催化剂, 采用热蒸发法, 在硅(Si)衬底上制备出掺Cd摩尔分数为6.7%的三元荆棘状Zn1-xCdxO单晶纳米结构. 荆棘状纳米结构样品的主干直径均一, 约为100 nm. 主干两侧刺的直径和长度分别约为10和100 nm. 由于Cd替位原子对ZnO带隙的调节作用, 样品的近带边(NBE)紫外(UV)发射从3.37 eV红移到3.13 eV. 结果表明, 氧气(O2)分压是形成荆棘状Zn1-xCdxO纳米结构的重要条件.

关键词: ZnO, 纳米结构, 纳米线, 晶体生长, 半导体杂质

Abstract: Ternary Zn1-xCdxO single-crystal bramble-like nanostructures with an incorporation Cd molar ratio of about 6.7% were synthesized by thermal evaporation of Zn and Cd on an Si substrate using Au as catalyst. The as-grown Zn1-xCdxO nanobrambles had a fairly uniform trunk with a diameter of approximately 100 nm. The diameter and length of the two-sided nano-thorns were about 10 and 100 nm, respectively. Ultra-violet (UV) near-band-edge (NBE) emission of the Zn1-xCdxO nanobrambles was red-shifted from3.37 to 3.14 eV due to the direct modulation of band gap caused by Cd substitution. The oxygen partial pressure was deemed as the critical experimental parameter for the formation of the bramble-like Zn1-xCdxO nanostructures.

Key words: ZnO, Nanostructure, Nanowires, Crystal growth, Impurity in semiconductor