化学浴沉积方法制备硫化铟敏化太阳电池及其性能研究

doi:10.3866/PKU.WHXB201211092

物理化学学报 >> 2013, Vol. 29 >> Issue (01): 89-94.doi: 10.3866/PKU.WHXB201211092

化学浴沉积方法制备硫化铟敏化太阳电池及其性能研究

朱俊¹, 张耀红^1,2, 胡林华¹, 戴松元¹

1 中国科学院新型薄膜太阳电池重点实验室, 中国科学院等离子体物理研究所, 合肥 230031;
2 中国科学院福建物质结构研究所, 中国科学院光电材料化学与物理重点实验室, 福州 350002

收稿日期:2012-10-09 修回日期:2012-11-07 发布日期:2012-12-14
通讯作者: 戴松元 E-mail:sydai@ipp.ac.cn
基金资助:
国家重点基础研究发展规划(973)(2011CBA00700); 国家高技术研究发展计划(863)(2011AA050527)及国家自然科学基金(21003130, 21103197, 21173227, 21173228)资助项目

Preparation of In₂S₃ Sensitized Solar Cells with Chemical Bath Deposition and Their Performance

ZHU Jun¹, ZHANG Yao-Hong^1,2, HU Lin-Lua¹, DAI Song-Yuan¹

1 Key Lab of Novel Thin Film Solar Cells, Institute of Plasma Physics, Chinese Academy of Sciences, Hefei, 230031, P. R. China;
2 Key Lab of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, P. R. China

Received:2012-10-09 Revised:2012-11-07 Published:2012-12-14
Supported by:
The project was supported by the National Key Basic Research Program of China (973) (2011CBA00700), National High Technology Research and Development Program of China (863) (2011AA050527), and National Natural Science Foundation of China (21003130, 21103197, 21173227, 21173228).

摘要/Abstract

摘要：

硫化铟是一种稳定、低毒性的半导体材料. 本文采用低成本的化学浴沉积方法制备了硫化铟敏化太阳电池, X射线衍射(XRD)、光电子能谱(XPS)和扫描电镜(SEM)结果表明形成了硫化铟敏化的二氧化钛薄膜. 化学浴沉积温度对所得硫化铟敏化薄膜的形貌有显著的影响, 进而影响电池性能. 温度太低时, 化学浴沉积反应速率太低, 只发生少量沉积; 温度太高时, 化学浴沉积反应速率较快, 硫化铟来不及沉积到二氧化钛多孔薄膜内部. 当温度在40℃时, 硫化铟沉积均匀性最好, 薄膜的光吸收性能最佳, 电池的短路电流最大, 另外, 填充因子达到最佳, 为65%, 电池总体光电转换效率为0.32%.

关键词: 硫化铟, 敏化, 太阳电池, 化学浴沉积, 复合

Abstract:

In₂S₃ is a stable semiconductor material with low toxicity. We prepared In₂S₃ sensitized solar cells using low-cost chemical bath deposition methodology. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) were used to reveal the microstructure of the In₂S₃ sensitized TiO₂ nanoporous films. Our results indicated that the deposition temperature has a remarkable effect on the morphology of In₂S₃ sensitized TiO₂ films, which in turn affects the photovoltaic performance of devices. When the deposition temperature was low, the deposition reaction rate was slow, resulting in only minimal deposition. However, if the deposition temperature was increased too much, there was insufficient time for the In₂S₃ to be deposited within the internal pore structure of the TiO₂ mesoporous films. The best homogeneous In₂S₃ sensitized TiO₂ films were obtained with a deposition temperature of 40℃. At this temperature, the optical absorption of the resulting film was optimal and displayed the largest short circuit current density among the films examined. Moreover, the fill factor was also the best, approaching 65%. The best overall power conversion efficiency was 0.32%.

Key words: Indium sulfide, Sensitization, Solar cell, Chemical bath depostion, Recombination

朱俊, 张耀红, 胡林华, 戴松元. 化学浴沉积方法制备硫化铟敏化太阳电池及其性能研究[J]. 物理化学学报, 2013, 29(01), 89-94. doi: 10.3866/PKU.WHXB201211092

ZHU Jun, ZHANG Yao-Hong, HU Lin-Lua, DAI Song-Yuan. Preparation of In₂S₃ Sensitized Solar Cells with Chemical Bath Deposition and Their Performance[J]. Acta Phys. -Chim. Sin. 2013, 29(01), 89-94. doi: 10.3866/PKU.WHXB201211092

链接本文: https://www.whxb.pku.edu.cn/CN/10.3866/PKU.WHXB201211092

https://www.whxb.pku.edu.cn/CN/Y2013/V29/I01/89

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化学浴沉积方法制备硫化铟敏化太阳电池及其性能研究

Preparation of In₂S₃ Sensitized Solar Cells with Chemical Bath Deposition and Their Performance

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Preparation of In₂S₃ Sensitized Solar Cells with Chemical Bath Deposition and Their Performance