沉积温度对等离子增强化学气相沉积法制备的SiNx:H薄膜特性的影响

doi:10.3866/PKU.WHXB20110632

Abstract

Abstract:

Hydrogenated silicon nitride films were prepared on the p-type polished silicon substrates by the direct plasma enhanced chemical vapor deposition (PECVD). The influences of deposition temperature on the composition, optical characteristics, structural characteristics, and passivation characteristics of the SiN_x:H film were studied. All the solar cell devices were fabricated using industrial state-of-art crystal silicon solar cell technology. The influence of deposition temperature on the as-fabricated cell's electrical performance is demonstrated. The refractive index of the film ranges from 1.926 to 2.231 and it increases with an increase in the deposition temperature. This shows that the Si/N mole ratio also increases with deposition temperature. The Si－H bond and the N－H bond break and form a new Si－N bond when the deposition temperature is higher. This increase in the Si－N concentration results in an increase in film density. The effective minor carrier lifetime of the coated wafer increases initially with the substrate temperature. At a temperature of 450 °C the effective minor carrier lifetime begins to decrease. This phenomenon can be explained by H extraction from the film. For all the samples, the effective minor carrier lifetime degrades with time. The SiN_x:H film prepared at a deposition temperature of 450 °C shows the best anti-reflection and surface passivation properties. The electrical performance of the fully functional solar cells is also demonstrated and the optimized results are highlighted and discussed.

Key words: SiN_x：H thin film, Deposition temperature, Structural property, Passivation, Solar cell, Efficiency

WEN Zhen-Li, CAO Xiao-Ning, ZHOU Chun-Lan, ZHAO Lei, LI Hai-Ling, WANG Wen-Jing. Influence of Deposition Temperature on the SiN_x:H Film Prepared by Plasma Enhanced Chemical Vapor Deposition[J]. Acta Phys. -Chim. Sin. 2011, 27(06), 1531-1536. doi: 10.3866/PKU.WHXB20110632

References

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Influence of Deposition Temperature on the SiN_x:H Film Prepared by Plasma Enhanced Chemical Vapor Deposition

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Influence of Deposition Temperature on the SiN_x:H Film Prepared by Plasma Enhanced Chemical Vapor Deposition