Acta Phys. -Chim. Sin. ›› 2008, Vol. 24 ›› Issue (01): 147-151.doi: 10.3866/PKU.WHXB20080126

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Semiconductor Properties of Anodic Oxide Film Formed on Aluminum

ZHAO Jing-Mao; GU Feng; ZHAO Xu-Hui; ZUO Yu   

  1. College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, P. R. China
  • Received:2007-07-17 Revised:2007-09-12 Published:2008-01-05
  • Contact: ZHAO Jing-Mao

Abstract: The semiconductor properties of anodic oxide film formed on commercial pure aluminum were analyzed usingMott-Schottky theory and point defect model (PDM). The donor density, oxygen vacancy diffusion coefficient and flat-band potential were measured for the oxide films sealed by boiling water and K2Cr2O7, respectively. The results indicated that the anodic oxide films showed the n-type semiconductor property and the donor density decreased exponentially with the voltage elevating. The value of oxygen vacancy diffusion coefficient is about (1.12-5.53)伊10-14 cm-2·s-1. The flat-band potential of anodic oxide filmdeclined after sealing.

Key words: Commercial pure aluminum, Anodic oxide film, Semiconductor, Mott-Schottky plot