构建肖特基势垒并增强C@ZnO/Sn@GaN界面极化效应以实现高性能电磁波吸收

doi:10.1016/j.actphy.2026.100324

Abstract

Abstract:

The composition and structural design of composite materials are crucial for enhancing electromagnetic wave absorption (EMWA) performance. To achieve more controllable microscopic morphology adjustments while integrating composition design for broader-band EMWA, this section leverages the simple preparation process and good dispersion of CNs. Using a hydrothermal synthesis method, ZnSn(OH)₆ and γ-Ga₂O₃ were coated on the surface of CNs. Subsequently, high-temperature calcination transformed ZnSn(OH)₆ into a ZnO/Sn heterojunction, while γ-Ga₂O₃ was converted into GaN, constructing a multidimensional composite structure and introducing the Schottky barrier at the contact interface between metal and semiconductor. With optimized electromagnetic wave (EMW) loss mechanisms and impedance matching characteristics, the final C@ZnO/Sn@GaN composite material exhibited RL_min of −48.07 dB at 2.6 mm, EAB_max of 6.32 GHz at 2.2 mm. Due to its structure and composition, this composite also demonstrated excellent corrosion resistance, providing valuable insights for expanding its application fields. This study successfully constructed a series of composite materials with multicomponent heterointerfaces using a simple hydrothermal and high-temperature calcination approach, optimizing the high dielectric properties of pure carbon materials. Furthermore, the introduction of Schottky barriers altered electron transport characteristics, further enhancing the EMWA capabilities of the material.

Key words: Impedance matching, Semiconductor, Dielectric loss, Heterogeneous structure, Electromagnetic wave absorption

Guangrong Wu, Jiahui Zhu, Xiaomeng Guo, Changmiao Zhang, Mengting He, Hua Qiu, Dongwei Ma. Construction of Schottky barrier and the enhanced interface polarization effect of C@ZnO/Sn@GaN for high performance electromagnetic wave absorption[J]. Acta Phys. -Chim. Sin. 2026, 42(8), 100324. doi: 10.1016/j.actphy.2026.100324

Figures/Tables 10

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Composites	I_corr (A cm⁻²)	E_corr (V)
C	1.002 × 10⁻⁷	−0.0478
ZnSn(OH)₆	1.271 × 10⁻⁷	−0.0016
C@Ga₂O₃	1.004 × 10⁻⁷	−0.009
C@ZnO/Sn	1.373 × 10⁻⁶	−0.096
C@GaN	6.304 × 10⁻⁸	−0.0203
C@ZnO/Sn@GaN	4.371 × 10⁻⁸	−0.0117

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Construction of Schottky barrier and the enhanced interface polarization effect of C@ZnO/Sn@GaN for high performance electromagnetic wave absorption

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