基于低维材料的自供电光电探测器研究进展

doi:10.3866/PKU.WHXB202310004

物理化学学报 >> 2025, Vol. 41 >> Issue (3): 100020.doi: 10.3866/PKU.WHXB202310004

所属专题：新型光电功能材料

基于低维材料的自供电光电探测器研究进展

张宇航¹, 赵伟玮¹^,*(), 刘宏微¹^,*(), 吕俊鹏²

¹ 南京师范大学物理科学与技术学院, 江苏省光电技术重点实验室, 南京 210023
² 东南大学物理学院, 量子材料与信息器件教育部重点实验室, 南京 211189

收稿日期:2023-10-09 修回日期:2023-11-01 录用日期:2023-11-03 发布日期:2023-12-20
通讯作者: Email: 06301@njnu.edu.cn (赵伟玮)phylhw@njnu.edu.cn (刘宏微)
基金资助:
国家自然科学基金(T2222011c); 国家自然科学基金(62174026); 国家自然科学基金(12274234); 国家重点研发计划(2023YFB3611400); 国家重点研发计划(2019YFA0308000); 中央高校基本科研业务费专项资金(242023k30027)

Progress on Self-Powered Photodetectors Based on Low-Dimensional Materials

Yuhang Zhang¹, Weiwei Zhao¹^,*(), Hongwei Liu¹^,*(), Junpeng Lü²

¹ Jiangsu Key Lab on Optoelectronic Technology, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China
² Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China

Received:2023-10-09 Revised:2023-11-01 Accepted:2023-11-03 Published:2023-12-20
Contact: Email: 06301@njnu.edu.cn (Weiwei Zhao)phylhw@njnu.edu.cn (Hongwei Liu)
Supported by:
the National Natural Science Foundation of China(T2222011c); the National Natural Science Foundation of China(62174026); the National Natural Science Foundation of China(12274234); the National Key Research and Development Program of China(2023YFB3611400); the National Key Research and Development Program of China(2019YFA0308000); the Fundamental Research Funds for the Central Universities(242023k30027)

摘要/Abstract

摘要：

自供电光电探测器可在无外部供能时将入射光信号转换为电信号，实现光探测功能。结合低维材料可将自供电光电探测器尺寸缩小至微纳量级，从而进一步实现器件的微型化和集成化。本文介绍了基于自供电技术的低维材料光电探测器的架构及工作原理，总结了当前自供电光电探测器应用进展，讨论了自供电光电探测器未来的发展方向与存在的问题，希望能为新型自供电光电探测器的材料选择和开发提供参考。

关键词: 自供电, 光电探测器, 低维材料, 异质结, 光伏效应

Abstract:

In recent years, there has been a growing interest in self-powered photodetectors, which can detect light without needing an external power supply. This unique feature makes them highly attractive for addressing the current energy shortage and the future demand for miniaturized devices. Among various design approaches for self-powered photodetectors, the use of low-dimensional materials holds great promise. Low-dimensional nanomaterials offer several advantages for self-powered photodetectors. They can be assembled into large area ordered structures such as ultra-thin layers, nanowire arrays, and quantum dot superlattices. Additionally, their atomic-level thickness provides a large specific surface area and facilitates integration with other materials. By combining different low-dimensional materials with complementary enhancements in bandgap, carrier transport rate, and light collection efficiency, the performance of self-powered photodetectors can be significantly improved. These devices can be scaled down to micro-nano levels while taking advantage of the adjustable bandgap, wide spectral response, high carrier migration rate, and high light absorption efficiency offered by low-dimensional materials. This article introduces the performance metrics of photodetectors, including photoresponsivity, noise equivalent power, detectivity, and response time. It then discusses the latest advancements in self-powered photodetectors based on 0D, 1D, and 2D materials. In the section on 0D material self-powered photodetectors, the device structure design using 0D materials as heterojunction components and doping materials is presented, highlighting their respective advantages. The section on 1D material self-powered photodetectors summarizes three main device structure types: planar, vertical, and core-shell, along with their individual advantages. The focus is placed on the content related to 2D material self-powered photodetectors. Graphene, transition metal dichalcogenides (TMDs), and black phosphorus are the most widely used 2D materials, and their preparation methods and the latest advancements in self-powered photodetectors are discussed. The controllable diversity in electrical properties resulting from interlayer interactions in two-dimensional materials offers great potential for new principles and multifunctional electronic devices. Finally, the article summarizes and discusses the key challenges and future development directions for self-powered photodetectors based on low-dimensional materials. In summary, the utilization of low-dimensional materials in self-powered photodetectors presents a promising direction for the development of advanced optoelectronic devices. By utilizing the unique properties of these materials, such as their atomic-level thickness, large specific surface area, and controllable electrical properties, significant advancements can be made in the field of self-powered photodetectors. The challenges associated with these materials, such as their complex fabrication processes, will need to be addressed to fully realize their potential in practical applications.

Key words: Self-power, Photodetector, Low-dimensional material, Heterojunction, Photovoltaic effect

张宇航, 赵伟玮, 刘宏微, 吕俊鹏. 基于低维材料的自供电光电探测器研究进展[J]. 物理化学学报, 2025, 41(3), 100020. doi: 10.3866/PKU.WHXB202310004

Yuhang Zhang, Weiwei Zhao, Hongwei Liu, Junpeng Lü. Progress on Self-Powered Photodetectors Based on Low-Dimensional Materials[J]. Acta Phys. -Chim. Sin. 2025, 41(3), 100020. doi: 10.3866/PKU.WHXB202310004

链接本文: https://www.whxb.pku.edu.cn/CN/10.3866/PKU.WHXB202310004

https://www.whxb.pku.edu.cn/CN/Y2025/V41/I3/100020

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Type	Devices	Wavelength (nm)	R (mA∙W⁻¹)	D (Jones)	Response Time (µs)	Ref.
0D	C QDs-ZnO/Si	468	2.082 × 10³	–	9.5	52
	CsPbBr₃ QDs/TiO₂	530	1.01 × 10⁴	9.35 × 10¹³	–	50
	C QDs/Si	600	353	–	20/40	29
	Ag QDs-ZnO/PEDOT: PSS	325	25.4	6.73 × 10¹⁰	100	30
1D	Sb₂Se₃ NRA/B-ZnO	625	172.8	2.25 × 10¹¹	–	58
	ZnO NRA/Si	430	500	–	–	32
	CuI NW/Ga₂O₃ NW	350	8.46	7.75 × 10¹¹	2.89 × 10⁴	56
	CdS NW/Si	484	36	2.3 × 10¹²	3×10⁴	31
	ZnO NRA /Si	1064	0.43	–	210/260	57
2D	MAPbBr₃/MoS₂	532	368	3.74 × 10¹²	–	80
	MoS₂/Si	808	–	–	1.6× 10^-2	82
	RGO-MoS₂/Si	808	2.18 × 10⁴	3.8 × 10¹⁵	2.8/46.6	81
	InSe/WSe₂/SnS₂	400	410	–	110/120	90
	PtSe₂/GaAs	808	262	1 × 10¹²	5.5/6.5	94
	PtSe₂/Si	780	300.2	1 × 10¹³	38/44	93
	MoO₃-Gr/Si	750	400	5.4 × 10¹²	–	73
	RGO/Si	600	1.52 × 10³	–	2×10³	34
	RGO/Ge	1400	51.8	1.38 × 10¹⁰	23	103
	Gr/Pentacene	658	1×10⁸	> 10¹¹	6/9	105
	BP/Bi₂O₂Se	700	–	2.8×10¹¹	9×10³	35
	PtSe₂/Si	808	520	3.26 × 10¹³	55.3/170	89
	Gr/Si	532	510	–	130	100

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基于低维材料的自供电光电探测器研究进展

Progress on Self-Powered Photodetectors Based on Low-Dimensional Materials

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