物理化学学报 >> 2026, Vol. 42 >> Issue (8): 100324.doi: 10.1016/j.actphy.2026.100324

论文 上一篇    下一篇

构建肖特基势垒并增强C@ZnO/Sn@GaN界面极化效应以实现高性能电磁波吸收

吴广荣1,2,*,†(), 朱佳慧3,†, 郭小萌3,†, 张昌淼1, 何梦婷1, 邱华4, 马冬威1,*()   

  1. 1 湖北汽车工业学院汽车材料学院, 湖北 十堰 442002
    2 青岛恒兴科技学院, 山东 青岛 266100
    3 青岛大学材料科学与工程学院, 山东 青岛 266071
    4 西北工业大学化学化工学院, 陕西 西安 710072
  • 收稿日期:2026-03-30 修回日期:2026-05-06 录用日期:2026-05-12 发布日期:2026-06-11
  • 通讯作者: Email: guangrong0913@163.com (吴广荣)madongwei107@163.com (马冬威)
  • 作者简介:

    †这些作者对本工作做出了同等贡献

Construction of Schottky barrier and the enhanced interface polarization effect of C@ZnO/Sn@GaN for high performance electromagnetic wave absorption

Guangrong Wu1,2,*(), Jiahui Zhu3, Xiaomeng Guo3, Changmiao Zhang1, Mengting He1, Hua Qiu4, Dongwei Ma1,*()   

  1. 1 School of Automotive Materials, Hubei University of Automotive Technology, Shiyan 442002, Hubei Province, China
    2 Qingdao Hengxing University of Science and Technology, Qingdao 266100, Shandong Province, China
    3 College of Materials Science and Engineering, Qingdao University, Qingdao 266071, Shandong Province, China
    4 School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an 710072, Shaanxi Province, China
  • Received:2026-03-30 Revised:2026-05-06 Accepted:2026-05-12 Published:2026-06-11
  • Contact: Email: guangrong0913@163.com (Guangrong Wu)madongwei107@163.com (Dongwei Ma)

摘要:

复合材料的组成和结构设计对于提升电磁波吸收(EMWA)性能至关重要。为了在实现更可控的微观形貌调控的同时,整合组成设计以获得更宽频带的EMWA性能,本文利用碳纳米管(CNs)的简易制备工艺和良好的分散性。采用水热合成法,在CNs表面包覆ZnSn(OH)6和γ-Ga2O3。随后,高温煅烧将ZnSn(OH)6转化为ZnO/Sn异质结,同时将γ-Ga2O3转化为GaN,构建了多维复合结构,并在金属与半导体接触界面引入了肖特基势垒。通过优化电磁波损耗机制和阻抗匹配特性,最终得到的C@ZnO/Sn@GaN复合材料在2.6 mm处实现了−48.07 dB的最小反射损耗(RLmin),在2.2 mm处实现了6.32 GHz的最大吸收吸收频率(EABmax)。由于其独特的结构和组成,该复合材料展现出优异的耐腐蚀性,为拓展其应用领域提供了宝贵的思路。本研究采用简单的水热法和高温煅烧法成功构建了一系列具有多组分异质界面的复合材料,优化了纯碳材料的高介电性能。此外,肖特基势垒的引入改变了电子传输特性,进一步增强了材料的电磁波吸收能力。

关键词: 阻抗匹配, 半导体, 介电损耗, 异质结构, 电磁波吸收

Abstract:

The composition and structural design of composite materials are crucial for enhancing electromagnetic wave absorption (EMWA) performance. To achieve more controllable microscopic morphology adjustments while integrating composition design for broader-band EMWA, this section leverages the simple preparation process and good dispersion of CNs. Using a hydrothermal synthesis method, ZnSn(OH)6 and γ-Ga2O3 were coated on the surface of CNs. Subsequently, high-temperature calcination transformed ZnSn(OH)6 into a ZnO/Sn heterojunction, while γ-Ga2O3 was converted into GaN, constructing a multidimensional composite structure and introducing the Schottky barrier at the contact interface between metal and semiconductor. With optimized electromagnetic wave (EMW) loss mechanisms and impedance matching characteristics, the final C@ZnO/Sn@GaN composite material exhibited RLmin of −48.07 dB at 2.6 mm, EABmax of 6.32 GHz at 2.2 mm. Due to its structure and composition, this composite also demonstrated excellent corrosion resistance, providing valuable insights for expanding its application fields. This study successfully constructed a series of composite materials with multicomponent heterointerfaces using a simple hydrothermal and high-temperature calcination approach, optimizing the high dielectric properties of pure carbon materials. Furthermore, the introduction of Schottky barriers altered electron transport characteristics, further enhancing the EMWA capabilities of the material.

Key words: Impedance matching, Semiconductor, Dielectric loss, Heterogeneous structure, Electromagnetic wave absorption