物理化学学报

上一篇    下一篇

层状Ni2Si/SiC/C复合材料的界面工程用于宽带微波吸收

娄楚林1, 马冬威2, 范聪敏1, 陈洁1, 刘澜翔1, 何秦川1, 王益群1,3   

  1. 1成都理工大学材料与化学化工学院, 四川 成都 610059;
    2湖北汽车工业学院汽车材料学院, 湖北 十堰 442002;
    3电子科技大学电磁辐射控制材料国家工程研究中心, 四川 成都 611731
  • 收稿日期:2026-06-17 修回日期:2026-07-30
  • 通讯作者: 范聪敏, 王益群 E-mail:fcongmin@mail.ustc.edu.cn;wangyiqun17@cdut.edu.cn

Interfacial engineering of layered Ni2Si/SiC/C composites for broadband microwave absorption

Chulin Lou1, Dongwei Ma2, Congmin Fan1, Jie Chen1, Lanxiang Liu1, Qinchuan He1, Yiqun Wang1,3   

  1. 1 College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu 610059, Sichuan Province, China;
    2 School of Automotive Materials, Hubei University of Automotive Technology, Shiyan 442002, Hubei Province, China;
    3 National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 611731, Sichuan Province, China
  • Received:2026-06-17 Revised:2026-07-30
  • Contact: Congmin Fan, Yiqun Wang E-mail:fcongmin@mail.ustc.edu.cn;wangyiqun17@cdut.edu.cn

PDF

50

赞

补充材料

1

摘要： SiC/C复合材料是极具前景的微波吸收材料，但其有限的衰减路径和不佳的阻抗匹配使其难以实现强吸收和宽频吸收。本研究采用碳热还原法制备了层状Ni2Si/SiC/C复合材料，以调控SiC/C体系的异质界面和磁–介电响应。通过调控合成温度，精确控制了相组成和微观结构，构建了具有明确Ni2Si/SiC/C异质界面的优化层状结构。Ni2Si的引入不仅提供了适度的磁损耗，而且平衡了介电和磁响应。密度泛函理论(DFT)计算进一步表明，Ni2Si/SiC/C异质界面诱导了电子结构重构和局部电荷重新分布，从而促进了界面极化并增强了电磁衰减。SNC-3表现出最佳综合性能：在20 wt%填料负载下，厚度1.27 mm时RLmin达-55.14 dB，EABmax为4.08 GHz。RCS模拟进一步证实了其对金属基底的散射抑制效果。本研究为轻质、薄层宽频吸收的SiC基微波吸收材料提供了可行路径。

关键词: Ni2Si/SiC/C复合材料, 异质界面工程, 层状碳骨架, 微波吸收, 阻抗匹配, 磁–介电耦合

Abstract: SiC/C composites are promising microwave absorbers, but their limited attenuation routes and imperfect impedance matching make it difficult to achieve strong and broadband absorption. In this work, layered Ni2Si/SiC/C composites were fabricated via a carbothermal reduction strategy to regulate the heterointerfaces and magneto-dielectric response of SiC/C. By tailoring the synthesis temperature, the phase composition and microstructure were precisely controlled, enabling the construction of an optimized layered architecture with well-defined Ni2Si/SiC/C heterointerfaces. The incorporation of Ni2Si introduced moderate magnetic-loss capability and effectively regulated the dielectric–magnetic response, thereby improving their balance. Density functional theory (DFT) calculations further revealed that the Ni2Si/SiC/C heterointerfaces induced electronic-structure reconstruction and local charge redistribution, thereby promoting interfacial polarization and enhancing electromagnetic attenuation. SNC-3 showed the best overall performance, with an RLmin of -55.14 dB and an EABmax of 4.08 GHz at a thickness of 1.27 mm under 20 wt% filler loading. RCS simulation further confirmed its scattering suppression effect on a metallic substrate. This work provides a feasible route for lightweight SiC-based microwave absorbers with thinlayer and broadband absorption.

Key words: Ni2Si/SiC/C composites, Heterointerface engineering, Layered carbon framework, Microwave absorption, Impedance matching, Magnetic–dielectric coupling