光刻胶辅助的石墨烯晶圆无损转移

doi:10.3866/PKU.WHXB202306038

物理化学学报 >> 2023, Vol. 39 >> Issue (10): 2306038.doi: 10.3866/PKU.WHXB202306038

光刻胶辅助的石墨烯晶圆无损转移

廖珺豪¹^,²^,³^,⁴, 赵一萱¹^,³, 胡兆宁³^,⁵, 补赛玉⁵, 陆琪³^,⁶, 尚明鹏¹^,²^,³, 贾开诚³, 裘晓辉⁴^,*(), 谢芹¹^,²^,³^,*(), 林立¹^,²^,³^,⁵^,*(), 刘忠范¹^,²^,³^,*()

¹ 北京大学化学与分子工程学院, 北京大学纳米化学研究中心, 北京分子科学国家研究中心, 北京 100871
² 北京大学前沿交叉学科研究院, 北京 100871
³ 北京石墨烯研究院, 北京 100095
⁴ 国家纳米科学中心, 北京 100190
⁵ 北京大学材料科学与工程学院, 北京 100871
⁶ 中国石油大学理学院, 北京 102249

收稿日期:2023-06-26 录用日期:2023-07-24 发布日期:2023-08-07
通讯作者: 裘晓辉,谢芹,林立,刘忠范 E-mail:xhqiu@nanoctr.cn;xieqin-cnc@pku.edu.cn;linli-cnc@pku.edu.cn;zfliu@pku.edu.cn
基金资助:
国家自然科学基金(T2188101);国家自然科学基金(61974139);国家自然科学基金(51432002);国家自然科学基金(51520105003);国家自然科学基金(12232016);北京市科学技术委员会(Z181100004818001);北京市科学技术委员会(Z191100000819005);北京市科学技术委员会(Z191100000819007);北京市科学技术委员会(Z201100008720005);国家重点基础研究发展规划项目(2016YFA0200101);国家重点基础研究发展规划项目(2016YFA0200103);国家重点基础研究发展规划项目(2019YFA0708203);北京分子科学国家研究中心(BNLMS-CXTD-202001)

Crack-Free Transfer of Graphene Wafers via Photoresist as Transfer Medium

Junhao Liao¹^,²^,³^,⁴, Yixuan Zhao¹^,³, Zhaoning Hu³^,⁵, Saiyu Bu⁵, Qi Lu³^,⁶, Mingpeng Shang¹^,²^,³, Kaicheng Jia³, Xiaohui Qiu⁴^,*(), Qin Xie¹^,²^,³^,*(), Li Lin¹^,²^,³^,⁵^,*(), Zhongfan Liu¹^,²^,³^,*()

¹ Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
² Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
³ Beijing Graphene Institute (BGI), Beijing 100095, China
⁴ National Center for Nanoscience and Technology, Beijing 100190, China
⁵ School of Materials Science and Engineering, Peking University, Beijing 100871, China
⁶ College of Science, China University of Petroleum, Beijing 102249, China

Received:2023-06-26 Accepted:2023-07-24 Published:2023-08-07
Contact: Xiaohui Qiu, Qin Xie, Li Lin, Zhongfan Liu E-mail:xhqiu@nanoctr.cn;xieqin-cnc@pku.edu.cn;linli-cnc@pku.edu.cn;zfliu@pku.edu.cn
Supported by:
the National Natural Science Foundation of China(T2188101);the National Natural Science Foundation of China(61974139);the National Natural Science Foundation of China(51432002);the National Natural Science Foundation of China(51520105003);the National Natural Science Foundation of China(12232016);Beijing Municipal Science & Technology Commission(Z181100004818001);Beijing Municipal Science & Technology Commission(Z191100000819005);Beijing Municipal Science & Technology Commission(Z191100000819007);Beijing Municipal Science & Technology Commission(Z201100008720005);National Basic Research Program of China(2016YFA0200101);National Basic Research Program of China(2016YFA0200103);National Basic Research Program of China(2019YFA0708203);Beijing National Laboratory for Molecular Sciences(BNLMS-CXTD-202001)

1. 附件.pdf(1149KB)

摘要/Abstract

摘要：

为实现石墨烯在光通讯、光互联、太赫兹探测等电子和光电子领域的应用价值，需要在硅基衬底上得到大面积、均一且性能优异的石墨烯薄膜材料。而高品质石墨烯薄膜的制备衬底多为金属，因此制备的石墨烯薄膜不可避免地需要通过合适的转移方法，转移到目标应用衬底上。而转移过程通常会引入破损、褶皱和污染物，其原因之一是石墨烯转移和器件加工过程中表面反复涂覆和去除转移介质聚合物和光刻胶类聚合物。为避免反复涂覆与去除高分子聚合物，本文直接利用光刻胶作为转移介质，成功实现了石墨烯的洁净转移。同时，转移后石墨烯的电学性质得到明显改善，平均载流子迁移率可达6200 cm²·V⁻¹·s⁻¹。此方法可实现石墨烯等二维材料无损、洁净转移和高性能器件的构筑，将有助于推动二维材料在电子、光电子器件领域的应用。

关键词: 石墨烯转移, 光刻胶, 转移介质, 载流子迁移率

Abstract:

Graphene offers exceptional properties, such as ultra-high carrier mobility, near-ballistic transport characteristics, and ultra-high-frequency operational response, making it an ideal material for radio-frequency devices and high-speed optical communications. To realize its potential applications, high-quality graphene films must be integrated onto target substrates with reliability, uniformity, and scalability. Despite significant progress in the chemical vapor deposition of high-quality graphene on catalytic metal substrates, the transfer of such films onto application-targeted substrates remains necessary for large-scale technological use, but it faces challenges like contaminations and cracks. Graphene's flexibility and single-atom thickness make it vulnerable to damage and folding during the transfer process due to force disturbances and uneven force distribution. Traditional graphene transfer methods employ organic polymers as a medium and remove them using organic solvents after transferring graphene onto the desired substrates. However, this repetitive process generates organic waste and leaves unavoidable contamination due to the limited solubility of the polymer. Furthermore, selective interlacing of organic solvents during polymer removal can detach graphene from the substrate and cause cracks. In this study, we demonstrate a novel approach to address these issues. Instead of using organic polymers, we directly use the photoresist as the transfer medium to mechanically delaminate graphene from the metal growth substrate onto the targeted substrate. By doing so, we eliminate the need for repeated polymer coating on the graphene surface, enabling successful transfer without crack formation, wrinkles, or unintentional doping. The strong interaction between graphene and the photoresist, coupled with the weakened interaction between graphene and the growth substrate due to oxidation, ensures crack-free delamination. Moreover, the photoresist serves as a patterned mask plate for exposure, etching, and other subsequent device fabrication processes. As a result, the electrical properties of graphene are improved, achieving an average carrier mobility of 6200 cm²·V⁻¹·s⁻¹. This integrated approach not only enhances the device performance of two-dimensional materials but also paves the way for future applications of such materials in electronics and photonics. In conclusion, our method offers a promising solution for the successful transfer and device fabrication of graphene, enhancing its potential in the field of electronics and photonics.

Key words: Graphene transfer, Photoresist, Transfer medium, Carrier mobility

廖珺豪, 赵一萱, 胡兆宁, 补赛玉, 陆琪, 尚明鹏, 贾开诚, 裘晓辉, 谢芹, 林立, 刘忠范. 光刻胶辅助的石墨烯晶圆无损转移[J]. 物理化学学报, 2023, 39(10), 2306038. doi: 10.3866/PKU.WHXB202306038

Junhao Liao, Yixuan Zhao, Zhaoning Hu, Saiyu Bu, Qi Lu, Mingpeng Shang, Kaicheng Jia, Xiaohui Qiu, Qin Xie, Li Lin, Zhongfan Liu. Crack-Free Transfer of Graphene Wafers via Photoresist as Transfer Medium[J]. Acta Phys. -Chim. Sin. 2023, 39(10), 2306038. doi: 10.3866/PKU.WHXB202306038

链接本文: https://www.whxb.pku.edu.cn/CN/10.3866/PKU.WHXB202306038

https://www.whxb.pku.edu.cn/CN/Y2023/V39/I10/2306038

图/表 4

参考文献 48

1	Lange K. ; Muller-Seitz G. ; Sydow J. ; Windeler A. Res. Policy 2013, 42 (3), 647. doi: 10.1016/j.respol.2012.12.001
2	Yeh L. Y. ; Liao M. H. ; Chen C. H. ; Wu J. ; Lee J. Y. M. ; Liu C. W. ; Lee T. L. ; Liang M. S. IEEE Trans. Electron Devices 2009, 56 (11), 2848. doi: 10.1109/ted.2009.2030542
3	Welser J. ; Hoyt J. L. ; Gibbons J. F. IEEE Electron. Device. Lett. 1994, 15 (3), 100. doi: 10.1109/55.285389
4	Radisavljevic B. ; Kis A. Nat. Mater. 2013, 12 (9), 815. doi: 10.1038/nmat3687
5	Dennard R. H. ; Gaensslen F. H. ; Yu H. N. ; Rideout V. L. ; Bassous E. ; Leblanc A. R. Proc. IEEE 1999, 87 (4), 668. doi: 10.1109/jproc.1999.752522
6	Novoselov K. S. ; Geim A. K. ; Morozov S. V. ; Jiang D. ; Zhang Y. ; Dubonos S. V. ; Grigorieva I. V. ; Firsov A. A. Science 2004, 306 (5696), 666. doi: 10.1126/science.1102896
7	Kretinin A. V. ; Cao Y. ; Tu J. S. ; Yu G. L. ; Jalil R. ; Novoselov K. S. ; Haigh S. J. ; Gholinia A. ; Mishchenko A. ; Lozada M. ; et al Nano Lett. 2014, 14 (6), 3270. doi: 10.1021/nl5006542
8	Castro Neto A. H. ; Guinea F. ; Peres N. M. R. ; Novoselov K. S. ; Geim A. K. Rev. Mod. Phys. 2009, 81 (1), 109. doi: 10.1103/revmodphys.81.109
9	Cao Y. ; Fatemi V. ; Fang S. ; Watanabe K. ; Taniguchi T. ; Kaxiras E. ; Jarillo-Herrero P. Nature 2018, 556 (7699), 43. doi: 10.1038/nature26160
10	Giambra M. A. ; Miseikus V. ; Pezzini S. ; Marconi S. ; Montanaro A. ; Fabbri F. ; Sorianello V. ; Ferrari A. C. ; Coletti C. ; Romagnoli M. ACS Nano 2021, 15 (2), 3171. doi: 10.1021/acsnano.0c09758
11	Goossens S. ; Navickaite G. ; Monasterio C. ; Gupta S. ; Piqueras J. J. ; Perez R. ; Burwell G. ; Nikitskiy I. ; Lasanta T. ; Galan T. ; et al Nat. Photonics 2017, 11 (6), 366. doi: 10.1038/nphoton.2017.75
12	Marconi S. ; Giambra M. A. ; Montanaro A. ; Miseikis V. ; Soresi S. ; Tirelli S. ; Galli P. ; Buchali F. ; Templ W. ; Coletti C. ; et al Nat. Commun. 2021, 12 (1), 806. doi: 10.1038/s41467-021-21137-z
13	Liu C. H. ; Chang Y. C. ; Norris T. B. ; Zhong Z. H. Nat. Nanotechnol. 2014, 9 (4), 273. doi: 10.1038/nnano.2014.31
14	Tian H. ; Yang Y. ; Xie D. ; Cui Y. L. ; Mi W. T. ; Zhang Y. G. ; Ren T. L. Sci. Rep. 2014, 4, 3598. doi: 10.1038/srep03598
15	Wang M. ; Huang M. ; Luo D. ; Li Y. ; Choe M. ; Seong W. K. ; Kim M. ; Jin S. ; Wang M. ; Chatterjee S. ; et al Nature 2021, 596 (7873), 519. doi: 10.1038/s41586-021-03753-3
16	Yuan G. W. ; Lin D. J. ; Wang Y. ; Huang X. L. ; Chen W. ; Xie X. D. ; Zong J. Y. ; Yuan Q. Q. ; Zheng H. ; Wang D. ; et al Nature 2020, 577 (7789), 204. doi: 10.1038/s41586-019-1870-3
17	Chen T. A. ; Chuu C. P. ; Tseng C. C. ; Wen C. K. ; Wong H. S. P. ; Pan S. Y. ; Li R. T. ; Chao T. A. ; Chueh W. C. ; Zhang Y. F. ; et al Nature 2020, 579 (7798), 219. doi: 10.1038/s41586-020-2009-2
18	Li Y. L. Z. ; Sun L. Z. ; Chang Z. H. ; Liu H. Y. ; Wang Y. C. ; Liang Y. ; Chen B. H. ; Ding Q. J. ; Zhao Z. Y. ; Wang R. Y. ; et al Adv. Mater. 2020, 32 (29), 2002034. doi: 10.1002/adma.202002034
19	Zhang J. C. ; Lin L. ; Jia K. C. ; Sun L. Z. ; Peng H. L. ; Liu Z. F. Adv. Mater. 2020, 32 (1), 1903266. doi: 10.1002/adma.201903266
20	Liu L. ; Li T. T. ; Ma L. ; Li W. S. ; Gao S. ; Sun W. J. ; Dong R. K. ; Zou X. L. ; Fan D. X. ; Shao L. W. ; et al Nature 2022, 605 (7908), 69. doi: 10.1038/s41586-022-04523-5
21	Liu X. T. ; Zhang J. C. ; Wang W. D. ; Zhao W. ; Chen H. ; Liu B. Y. ; Zhang M. Q. ; Liang F. S. ; Zhang L. J. ; Zhang R. ; et al Nano Res. 2022, 15 (4), 3775. doi: 10.1007/s12274-021-3922-x
22	Ci H. N. ; Chen J. T. ; Ma H. ; Sun X. L. ; Jiang X. Y. ; Liu K. C. ; Shan J. Y. ; Lian X. Y. ; Jiang B. ; Liu R. J. ; et al Adv. Mater. 2022, 34 (51), 2206389. doi: 10.1002/adma.202206389
23	Akinwande D. ; Huyghebaert C. ; Wang C. H. ; Serna M. I. ; Goossens S. ; Li L. J. ; Wong H. S. P. ; Koppens F. H. L. Nature 2019, 573 (7775), 507. doi: 10.1038/s41586-019-1573-9
24	Gao L. B. ; Ni G. X. ; Liu Y. P. ; Liu B. ; Neto A. H. C. ; Loh K. P. Nature 2014, 505 (7482), 190. doi: 10.1038/nature12763
25	Kim J. ; Park H. ; Hannon J. B. ; Bedell S. W. ; Fogel K. ; Sadana D. K. ; Dimitrakopoulos C. Science 2013, 342 (6160), 833. doi: 10.1126/science.1242988
26	Qing F. Z. ; Zhang Y. F. ; Niu Y. T. ; Stehle R. ; Chen Y. F. ; Li X. S. Nanoscale 2020, 12 (20), 10890. doi: 10.1039/d0nr01198c
27	Leong W. S. ; Wang H. Z. ; Yeo J. J. ; Martin-Martinez F. J. ; Zubair A. ; Shen P. C. ; Mao Y. W. ; Palacios T. ; Buehler M. J. ; Hong J. Y. ; et al Nat. Commun. 2019, 10 (1), 867. doi: 10.1038/s41467-019-08813-x
28	Zhang Z. K. ; Du J. H. ; Zhang D. D. ; Sun H. D. ; Yin L. C. ; Ma L. P. ; Chen J. S. ; Ma D. G. ; Cheng H. M. ; Ren W. C. Nat. Commun. 2017, 8, 14560. doi: 10.1038/ncomms14560
29	Zhao Y. X. ; Song Y. Q. ; Hu Z. N. ; Wang W. D. ; Chang Z. H. ; Zhang Y. ; Lu Q. ; Wu H. T. ; Liao J. H. ; Zou W. T. ; et al Nat. Commun. 2022, 13 (1), 4409. doi: 10.1038/s41467-022-31887-z
30	Hu Z. N. ; Li F. F. ; Wu H. T. ; Liao J. H. ; Wang Q. ; Chen G. ; Shi Z. F. ; Zhu Y. Q. ; Bu S. Y. ; Zhao Y. X. ; et al Adv. Mater. 2023, 35 (29), 2300621. doi: 10.1002/adma.202300621
31	De Fazio D. ; Purdie D. G. ; Ott A. K. ; Braeuninger-Weimer P. ; Khodkov T. ; Goossens S. ; Taniguchi T. ; Watanabe K. ; Livreri P. ; Koppens F. H. L. ; et al ACS Nano 2019, 13 (8), 8926. doi: 10.1021/acsnano.9b02621
32	Matsumae T. ; Fujino M. ; Suga T. ECS J. Solid State Sci. Technol. 2017, 6 (8), 512. doi: 10.1149/2.0111708jss
33	Song Y. Q. ; Gao Y. Q. ; Liu X. T. ; Ma J. ; Chen B. H. ; Xie Q. ; Gao X. ; Zheng L. M. ; Zhang Y. ; Ding Q. J. ; et al Adv. Mater. 2022, 34 (1), 2105851. doi: 10.1002/adma.202105851
34	Lin Y. C. ; Lu C. C. ; Yeh C. H. ; Jin C. H. ; Suenaga K. ; Chiu P. W. Nano Lett. 2012, 12 (1), 414. doi: 10.1021/nl203733r
35	Matsumae T. ; Koehler A. D. ; Greenlee J. D. ; Anderson T. J. ; Baumgart H. ; Jernigan G. G. ; Hobart K. D. ; Kub F. J. ECS J. Solid State Sci. Technol. 2015, 4 (7), 190. doi: 10.1149/2.0031507jss
36	Lui C. H. ; Liu L. ; Mak K. F. ; Flynn G. W. ; Heinz T. F. Nature 2009, 462 (7271), 339. doi: 10.1038/nature08569
37	Hu Z. N. ; Zhao Y. X. ; Zou W. T. ; Lu Q. ; Liao J. H. ; Li F. F. ; Shang M. P. ; Lin L. ; Liu Z. F. Adv. Funct. Mater. 2022, 32 (42), 2203179. doi: 10.1002/adfm.202203179
38	Chang Z. ; Yang R. ; Wei Y. J. Mech. Phys. Solids 2019, 132, 103697. doi: 10.1016/j.jmps.2019.103697
39	Lee J. E. ; Ahn G. ; Shim J. ; Lee Y. S. ; Ryu S. Nat. Commun. 2012, 3, 1024. doi: 10.1038/ncomms2022
40	Petrone N. ; Dean C. R. ; Meric I. ; Van der Zande A. M. ; Huang P. Y. ; Wang L. ; Muller D. ; Shepard K. L. ; Hone J. Nano Lett. 2012, 12 (6), 2751. doi: 10.1021/nl204481s
41	Banszerus L. ; Schmitz M. ; Engels S. ; Dauber J. ; Oellers M. ; Haupt F. ; Watanabe K. ; Taniguchi T. ; Beschoten B. ; Stampfer C. Sci. Adv. 2015, 1 (6), 1500222. doi: 10.1126/sciadv.1500222
42	Pezzini S. ; Miseikis V. ; Pace S. ; Rossella F. ; Watanabe K. ; Taniguchi T. ; Coletti C. 2D Mater. 2020, 7 (4), 041003. doi: 10.1088/2053-1583/aba645
43	Wang L. ; Meric I. ; Huang P. Y. ; Gao Q. ; Gao Y. ; Tran H. ; Taniguchi T. ; Watanabe K. ; Campos L. M. ; Muller D. A. ; et al Science 2013, 342 (6158), 614. doi: 10.1126/science.1244358
44	Du X. ; Skachko I. ; Barker A. ; Andrei E. Y. Nat. Nanotechnol. 2008, 3 (8), 491. doi: 10.1038/nnano.2008.199
45	Ki D. K. ; Morpurgo A. F. Nano Lett. 2013, 13 (11), 5165. doi: 10.1021/nl402462q
46	Lee W. H. ; Park Y. D. Adv. Mater. Interfaces 2018, 5, 1700316. doi: 10.1002/admi.201700316
47	Lee W. H. ; Park J. ; Kim Y. ; Kim K. S. ; Hong B. H. ; Cho K. Adv. Mater. 2011, 23 (30), 3460. doi: 10.1002/adma.201101340
48	Gammelgaard L. ; Caridad J. M. ; Cagliani A. ; Mackenzie D. M. A. ; Petersen D. H. ; Booth T. J. ; Boggild P. 2D Mater. 2014, 1 (3), 035005. doi: 10.1088/2053-1583/1/3/035005

[1]	霍春安, 邱圣杰, 梁青满, 耿碧君, 雷志超, 王干, 邹玉玲, 田中群, 杨扬. 光镊捕获和操控尺度极限的进展[J]. 物理化学学报, 2024, 40(1): 2303037 - .
[2]	冀连连, 王现鹏, 张莹莹, 申学礼, 薛娣, 王璐, 王滋, 王文冲, 黄丽珍, 迟力峰. 有机-有机界面效应的原位及非原位研究[J]. 物理化学学报, 2024, 40(1): 2304002 - .
[3]	徐美佳, 张宇琛, 朱一帆, 李昌林, 吴子昂, 周雄, 吴凯. Pd(100)氧化表面上低温丙烷氧化的活性相研究[J]. 物理化学学报, 2023, 39(10): 2305033 - .
[4]	邵长香, 曲良体. 水的气-液相转变获取电能研究进展[J]. 物理化学学报, 2023, 39(10): 2306004 - .
[5]	江吉周, 余良浪, 李方轶, 邓文明, 潘聪, 王海涛, 邹菁, 丁耀彬, 邓凤霞, 黄佳. 水蒸汽浴FeS₂高效Fenton降解甲草胺[J]. 物理化学学报, 2023, 39(3): 2209033 -0 .
[6]	汪茹, 刘志康, 严超, 伽龙, 黄云辉. 高安全锂离子电池复合集流体的界面强化[J]. 物理化学学报, 2023, 39(2): 2203043 -0 .
[7]	刘若娟, 刘冰之, 孙靖宇, 刘忠范. 气相助剂辅助绝缘衬底上石墨烯生长：现状与展望[J]. 物理化学学报, 2023, 39(1): 2111011 -0 .
[8]	曹冲, 张裴, 曹立冬, 刘铭鑫, 宋玉莹, 陈鹏, 黄啟良, 韩布兴. 液滴在超疏水植物叶面的沉积：实验和分子动力学模拟[J]. 物理化学学报, 2022, 38(12): 2207006 - .
[9]	贺文娅, 程虎虎, 曲良体. 烯碳纤维基能源器件的研究进展[J]. 物理化学学报, 2022, 38(9): 2203004 - .
[10]	曹晓辉, 侯成义, 李耀刚, 李克睿, 张青红, 王宏志. 基于MXenes的功能纤维的制备及其在智能可穿戴领域的应用[J]. 物理化学学报, 2022, 38(9): 2204058 - .
[11]	张勇, 陆浩杰, 梁晓平, 张明超, 梁华润, 张莹莹. 蚕丝基智能纤维及织物：潜力、现状与未来展望[J]. 物理化学学报, 2022, 38(9): 2103034 - .
[12]	夏洲, 邵元龙. 湿法纺制石墨烯纤维：工艺、结构、性能与智能应用[J]. 物理化学学报, 2022, 38(9): 2103046 - .
[13]	吴昆杰, 张永毅, 勇振中, 李清文. 碳纳米管纤维的连续制备及高性能化[J]. 物理化学学报, 2022, 38(9): 2106034 - .
[14]	温烨烨, 任明, 邸江涛, 张锦. 烯碳材料在人工肌肉领域的应用进展[J]. 物理化学学报, 2022, 38(9): 2107006 - .
[15]	俞宏伟, 李实, 李金龙, 朱韶华, 孙成珍. 气驱油油气混相过程的界面传质特性及其分子机制[J]. 物理化学学报, 2022, 38(5): 2006061 - .

光刻胶辅助的石墨烯晶圆无损转移

Crack-Free Transfer of Graphene Wafers via Photoresist as Transfer Medium

RichHTML

PDF

赞

补充材料

可视化

摘要/Abstract

引用本文

使用本文

图/表 4

参考文献 48

相关文章 15

Metrics

推荐阅读 0